SGS Thomson Microelectronics STD35NF06L Datasheet
STD35NF06L
N-CHANNEL 60V - 0.014Ω - 35A DPAK
STripFET™II MOSFET
PRELIMINARY DATA
TYPE V
DSS
STD35NF06L 60 V < 0.017
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 0.014 Ω
DS
R
DS(on)
I
D
Ω
35 A
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size™”
strip-based process. The res ulting transistor sh ows
extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
1
DPAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
T
stg
T
j
(•)Pu l se width limited by safe operating area
March 2001
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
60 V
60 V
Gate- source Voltage ± 15 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 140 A
Total Dissipation at TC = 25°C
35 A
24.5 A
60 W
Derating Factor 0.4 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
(1)ISD ≤35A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
1/6
STD35NF06L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 2.5 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 60 V
17.5 A
175 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 15V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 17.5 A
= 4.5V, ID = 17.5 A
V
GS
1 2.5 V
0.014 0.017
0.016 0.020
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 305 pF
Reverse Transfer
Capacitance
I
= 17.5 A
D
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
18 S
1700 pF
105 pF
Ω
Ω
2/6
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