SGS Thomson Microelectronics STD30NF06L-1, STD30NF06L Datasheet
1/10July 2002
STD30NF06L
N-CHANNEL 60V - 0.022Ω - 35A DPAK/IPAK
STripFET™ POWER MOSFET
(1) ISD ≤38A, di/dt ≤400A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
■ TYPICAL R
DS
(on) = 0.022Ω
■ EXCEPTIONAL dv/dt CAPABILI TY
■ LOGIC LEVEL GATE D R IVE
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
■ ADD SUFFIX “-1” FOR ORDERING IN IPAK
■ CHARACTERIZATION ORIENTED FOR
AUTOMOTIVE APPLICATIONS
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique “Single Feature
Size
™” strip-based process. The re sulting tran-
sistor shows extremely high packing density for
low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE
ABSOLUTE MAXIMUM RATINGS
(●) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STD30NF06L 60 V <0.028Ω 35 A
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
60 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at TC = 25°C
35 A
I
D
Drain Current (continuous) at TC = 100°C
25 A
I
DM
(l)
Drain Current (pulsed) 140 A
P
TOT
Total Dissipation at TC = 25°C
70 W
Derating Factor 0.46 W/°C
dv/dt (1) Peak Diode Recovery voltage slope 25 V/ns
T
stg
Storage Temperature
– 55 to 175 °C
T
j
Operating Junction Temperature
DPAK
3
2
1
1
3
IPAK
INTERNAL SCHEMATIC DIAGRAM
STD30NF06L
2/10
THERMA L D ATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON
(1)
DYNAMIC
Rthj-case Thermal Resistance Junction-case Max 2.14 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose 275 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
35 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
150 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0 60 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
1µA
V
DS
= Max Rating, TC = 125 °C
10 µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V ±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 250 µA
1 1.7 2.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS = 5 V, ID = 18 A
0.025 0.03 Ω
VGS = 10 V, ID = 18 A
0.022 0.028 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS > =15 V , ID=15 A 25 S
C
iss
Input Capacitance
V
DS
= 25 V, f = 1 MHz, VGS = 0
1600 pF
C
oss
Output Capacitance 215 pF
C
rss
Reverse Transfer
Capacitance
60 pF
3/10
STD30NF06L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1.5 %.
2. Pulse width li mited by safe operating ar ea.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time
V
DD
= 30 V, ID = 18 A
R
G
= 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
30 ns
t
r
Rise Time 105 ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 48 V, ID = 38 A,
VGS = 5 V
23
7
10
31 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time
Fall Time
VDD = 30 V, ID = 18 A,
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 3)
65
25
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
Source-drain Current 35 A
I
SDM
(2)
Source-drain Current (pulsed) 140 A
VSD (1)
Forward On Voltage
ISD = 35 A, VGS = 0
1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 38 A, di/dt = 100 A/µs,
V
DD
= 15 V, Tj = 150°C
(see test circuit, Figure 5)
70
140
4
ns
nC
A
Normalized Thermal ImpedenceSafe Operating Area
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