SGS Thomson Microelectronics STD30NE06L Datasheet
STD30NE06L
N - CHANNEL 60V - 0.025 Ω - 30A TO-252
STripFET POWER MOSFET
TYPE V
DSS
R
DS(o n)
I
D
ST D30N E 06L 60 V < 0 . 03 Ω 30 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE 100
■ APPLICATIONORIENTED
DS(on)
= 0.025 Ω
o
C
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEED SWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/dt (
T
(•) Pulse width limitedby safe operatingarea (1)ISD≤30A, di/dt ≤ 300 A/µs, VDD≤ V
May 1999
Dra in- sour c e Volta ge (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)60V
DGR
Gate-s ource Volt age ± 20 V
GS
Dra in Cu rr ent (continuous) at Tc=25oC30A
I
D
Dra in Cu rr ent (continuous) at Tc= 100oC21A
I
D
(•) D ra in Cu rr ent (pulsed) 120 A
Tot al Dissi pat io n at Tc=25oC55W
tot
Der ati ng Fa c t or 0.37 W/
1) P eak Diode Rec o ve ry volt a ge slope 7 V/ ns
St orage Tem pe ra t ure -65 to 175
stg
Max. Operating Junction Tem pe ra t ure 175
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STD30NE06L
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-PC Boa rd Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatur e For Soldering Pu rpose
l
Avalanche Current, Repe titive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
2.72
100
1.5
275
30 A
100 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. U nit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Volt age VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=15A
=5V ID=15A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.022
0.025
30 A
0.028
0.030ΩΩ
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. U nit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
= 1 5 A 15 25 S
VDS=25V f=1MHz VGS= 0 V 2370
350
90
µ
µA
pF
pF
pF
A
2/8
STD30NE06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
d(on)
Tur n-on Delay Time
Rise Time
t
r
VDD=30V ID=15A
R
=4.7
G
Ω
VGS=5V
27
10050135
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=30V ID=30A VGS=5V 31
13
13.5
41 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. U nit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=48V ID=30A
=4.7 Ω VGS=5V
R
G
(Indu ct iv e Load, see fig . 5)
20
45
72
27
60
100
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. U nit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
30
120
(pulsed)
(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 30 A di/dt = 100 A/µs
=30V Tj=150oC
V
DD
(see test circuit, fig. 5)
55
0.1
Charge
Reverse Recovery
3.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
SafeOperating Area ThermalImpedance
3/8
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