SGS Thomson Microelectronics STD2NC70Z Datasheet
STD2NC70Z
STD2NC70Z-1
N-CHANNEL 700V - 4.1Ω - 2.3A DPAK/IPAK
Zener-Protected PowerMESH™III MOSFET
TYPE V
STD2NC70Z
STD2NC70Z -1
■ TYPICAL R
■ EXTREMELY HIGH dv/dt AND CAPABILITY
DS
DSS
700V
700V
(on) = 4.1Ω
R
DS(on)
< 4.7
< 4.7
I
D
Ω
Ω
2.3 A
2.3 A
GATE TO - SOURCE ZENER DIODES
■ 100% AVALANCHE TESTED
■ VERY LOW GATE INPUT RESISTANCE
■ GATE CHARGE MINIMIZED
DESCRIPTION
The third generation of MESH OVERLAY™ P ow er
MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes betw een gate and
source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch
applications.
APPLICATIONS
■ SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
■ WELDING EQUIPMENT
3
1
DPAK
(Add Suffix “T4” for Tape & Reel)
3
2
1
IPAK
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
I
GS
V
ESD(G-S)
dv/dt (1) Peak Diode Recovery voltage slope 3 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operati ng area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
700 V
700 V
Gate- source Voltage ± 25 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 9.2 A
Total Dissipation at TC = 25°C
2.3 A
1.45 A
55 W
Derating Factor 0.44 W/°C
Gate-source Current (DC) ±50 mA
Gate source ESD(HBM-C=100pF, R=1.5K
Ω)
1.5 KV
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤2.3A, di/dt ≤100A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
1/10April 2001
STD2NC70Z/STD2NC70Z-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 2.27 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 0.1 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
∆
BV
DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 700 V
2.3 A
165 mJ
Breakdown Voltage
/∆TJBreakdown Voltage Temp.
ID = 1 mA, VGS = 0 0.8 V/°C
Coefficient
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±10 µA
GS
1µA
50 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 1.25 A
345V
4.1 4.7
Resistance
I
D(on)
On State Drain Current VDS > I
V
GS
D(on)
=10V
x R
DS(on)max,
2.3 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 50 pF
Reverse Transfer
Capacitance
I
= 1.25A
D
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
2S
530 pF
7pF
Ω
2/10
STD2NC70Z/STD2NC70Z-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 11 ns
Total Gate Charge
Gate-Source Charge 4 nC
Gate-Drain Charge 7 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 33 ns
Cross-over Time 40 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Source-drain Current 2.3 A
(2)
Source-drain Current (pulsed) 9.2 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 0.6 µC
Reverse Recovery Current 7.5 A
= 350 V, ID = 1.25 A
DD
RG= 4.7Ω VGS = 10V
(see test circuit, Figure 3)
V
= 560V, ID = 2.5A,
DD
VGS = 10V
V
= 560V, ID = 2.5 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
ISD = 2.3 A, VGS = 0
I
= 2.5 A, di/dt = 100A/µs,
SD
VDD = 27V, Tj = 150°C
(see test circuit, Figure 5)
14 ns
17 24 nC
16 ns
1.6 V
175 ns
GATE-SOURCE ZENER DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Igs=± 1mA (Open Drain) 25 V
Voltage
α
T Voltage Thermal Coefficient T=25°C Note(3) 1.3
I
Rz Dynamic Resistance
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
3.∆V
= αT (25°-T) BV
BV
GSO
(25°)
= 50 mA, VGS = 0
D
90
10
-4
/°C
Ω
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally
be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
3/10
Loading...