SGS Thomson Microelectronics STD2NC60 Datasheet
STD2NC40-1
N-CHANNEL 400V - 4.7Ω - 1.5A IPAK
PowerMeshII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD2NC40-1 400V <5.5Ω 1.5A
■ TYPICAL R
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
(on) = 4.7Ω
DS
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area
figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ SWITH MODE LOW POWER SUPPLIES
(SMPS)
■ CFL
3
2
1
IPAK
(SUFFIX“-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
j
(•)Pulse width limited by safe operating area
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
400 V
400 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC=25°C
Drain Current (continuos) at TC= 100°C
(■)
Drain Current (pulsed) 6 A
TotalDissipation at TC=25°C
1.5 A
0.95 A
30 W
Derating Factor 0.24 W/°C
Storage Temperature –60 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD≤1.5A, di/dt ≤100A/µs, VDD≤ V
(BR)DSS,Tj≤TJMAX.
1/8May 2000
STD2NC40-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 4.16 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthc-sink Thermal Resistance Case-sink Typ 1.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
=25°C, ID=IAR,VDD=50V)
j
I
= 250 µA, VGS=0
D
= Max Rating
V
DS
=0)
DS
GS
=0)
V
= Max Rating, TC= 125 °C
DS
= ±30V
V
GS
400 V
1.5 A
125 mJ
1 µA
50 µA
±100 nA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS=VGS,ID
= 10V,ID= 0.7 A
V
GS
V
DS>ID(on)xRDS(on)max,
= 250µA
VGS=10V
234V
4.7 5.5 Ω
1.5 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
g
(1)
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance 22.5 pF
Reverse Transfer
Capacitance
DS>ID(on)xRDS(on)max,
ID=0.7A
V
= 25V, f = 1 MHz, VGS=0
DS
1.1 S
108 pF
0.4 pF
2/8
STD2NC40-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 12 ns
TotalGate Charge
Gate-Source Charge 2.1 nC
Gate-Drain Charge 2.4 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time 27 ns
Cross-over Time 29 ns
V
= 200V,ID= 0.7A
DD
= 4.7Ω VGS= 10V
R
G
(see test circuit, Figure 3)
V
= 320V,ID = 1.5A,
DD
= 10V
V
GS
V
= 320V,ID= 1.5A,
DD
=4.7Ω, VGS= 10V
R
G
(see test circuit, Figure 5)
7.5 ns
6.1 8.2 nC
20 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SDM
V
SD
I
SD
t
rr
Source-drain Current 1.5 A
(1)
Source-drain Current (pulsed) 6 A
(2)
Forward On Voltage
Reverse Recovery Time
ISD= 1.5A, VGS=0
I
= 1.5A, di/dt = 100A/µs,
SD
= 100V,Tj= 150°C
V
DD
180 ns
1.5 V
(see test circuit, Figure 5)
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Reverse Recovery Charge 625 nC
Reverse Recovery Current 5 A
Thermal ImpedenceSafe Operating Area
3/8
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