SGS Thomson Microelectronics STD2NB60-1, STD2NB60T4 Datasheet

STD2NB60

N - CHANNEL ENHANCEMENT MODE

PowerMESH MOSFET

TYPE V

DSS

R

DS(on)

I

D

STD2NB60 600 V < 3.6 Ω 2.6 A

■ TYPICAL R

■ EXTREM E LY HIG H dv/ dt CA P A BILIT Y

■ 100% AVALANCHE TESTED

■ VERY LOW INTRINSIC CAPACITANCES

■ GATE CHARGE MINIMIZED

DS(on)

= 3.3 Ω

DESCRIPTION

Using the latest high voltage MESH OVERLAY process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R

per area, exceptional avalanche

DS(on)

and dv/dt capabilities and unrivalled gate charge and switching char acteristics.

APPLICATIONS

■ SWITCH MODE POWE R SUPPLI ES (SMPS)

■ DC-AC CONVE RTERS FOR WELDI NG

EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

3

2

IPAK

TO-251

(Suffix "- 1")

1

(Suffix "T4")

1

DPAK

TO-252

INTER NAL SCH E M ATI C DIAG RA M

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

IDM(•) Drain Current (pulsed) 10.4 A

P

dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns

T

(•) Pulse width limited by safe operating area (1) ISD ≤2.6A, di/dt ≤ 200 A/µs, VDD ≤ V

March 1998

Drain-source Voltage (VGS = 0) 600 V

DS

Drain- gate Voltage (RGS = 20 kΩ)

DGR

Gate-source Voltage ± 30 V

GS

I

Drain Current (continuous) at Tc = 25 oC 2.6 A

D

I

Drain Current (continuous) at Tc = 100 oC 1.6 A

D

Total Dissipation at Tc = 25 oC50W

tot

600 V

Derating Factor 0.4 W/

Storage Temperature -65 to 150

stg

T

Max. Operating Junction Temperature 150

j

, Tj ≤ T

(BR)DSS

JMAX

o

C

o

C

o

C

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STD2NB60

THERMAL DATA

R

thj-case

Rthj-amb

R

thc-si n k

T

Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose

l

AVALANCHE CHARACTERI S TICS

Symbol Parameter Max Value Unit

I

AR

E

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pulse Avalanche Energy

AS

(starting T

= 25 oC, ID = IAR, V

j

ma x, δ < 1%)

j

DD

= 50 V)

2.5

100

1.5

275

2.6 A

80 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

= 25 oC unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

I

= 250 µA V

D

GS

= 0

600 V

Breakdown Voltage

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

= Max Rating

V

DS

V

= Max Rating Tc = 125 oC

DS

V

= ± 30 V

GS

1

50

± 100 nA

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

Gate Threshold

V

= VGS ID = 250 µA

DS

345V

Voltage

R

DS(on)

Static Drain-source On

VGS = 10V ID =1.6 A 3.3 3.6 Ω

Resistance

I

D(on)

On State Drain Current VDS > I

V

= 10 V

GS

D(on)

x R

DS(on)max

3.3 A

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

g

(∗) Forward

fs

Transconductance

C

Input Capacitance

iss

Output Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS > I

V

DS

x R

D(on)

DS(on)max

= 25 V f = 1 MHz V

ID = 1.6 A 1.2 2 S

= 0 400

GS

57

520

77

7

9

µA µA

pF pF pF

2/9

STD2NB60

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING O N

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

d(on)

t

Q Q Q

SWITCHING O F F

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t

r(Voff)

t

SOURCE DRAIN DIO DE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area

r

Turn-on Time Rise Time

V

= 300 V ID = 1.6 A

DD

RG = 4.7 Ω VGS = 10 V

11

17

7

11

(see test circuit, figure 3)

Total Gate Charge

g

Gate-Source Charge

gs

Gate-Drain Charge

gd

Off-voltage Rise Time Fall Time

t

f

Cross-over Time

c

Source-drain Current

(•)

Source-drain Current

V

= 480 V ID =3.3 A V

DD

V

= 480 V ID = 3.3 A

DD

= 4.7 Ω VGS = 10 V

R

G

(see test circuit, figure 5)

= 10 V 15

GS

6.2

5.6

11 13 18

22 nC

16 18 25

3.3

13.2

(pulsed)

(∗) Forward On Voltage ISD = 3.3 A VGS = 0 1.6 V

Reverse Recovery

rr

Time Reverse Recovery

rr

I

= 3.3 A di/dt = 100 A/µs

SD

V

= 100 V Tj = 150 oC

DD

(see test circuit, figure 5)

500

2.1 Charge Reverse Recovery

8.5 Current

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Are a Thermal Impe dance

3/9