SGS Thomson Microelectronics STD2NB60 Datasheet
STD2NB60
N - CHANNEL ENHANCEMENT MODE
PowerMESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D2 NB60 600 V < 3.6 Ω 2.6 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ VERYLOW INTRINSIC CAPACITANCES
■ GATECHARGEMINIMIZED
DS(on)
=3.3 Ω
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■ SWITCHMODEPOWER SUPPLIES(SMPS)
■ DC-ACCONVERTERS FOR WELDING
EQUIPMENTAND UNINTERRUPTIBLE
POWERSUPPLIESAND MOTORDRIVE
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1)ISD≤2.6A, di/dt ≤ 200 A/µs, VDD≤ V
March 1998
Drain-source Voltage (VGS=0) 600 V
DS
DGR Drain- gate Voltage (R
Gat e- source Vo lt age ± 30 V
GS
I
Drain Cur rent ( continuous) at Tc=25oC2.6A
D
I
Drain Cur rent ( continuous) at Tc=100oC1.6A
D
=20kΩ)
GS
600 V
(•) Dra in Cur rent ( pul sed) 10.4 A
Tot al Dissipation at Tc=25oC50W
tot
Derating Factor 0.4 W/
1) Peak Diode Rec overy volt age s l ope 4.5 V/ns
Sto rage Tempe rature -65 to 150
stg
T
Max. Operating Ju nc t io n Tem peratur e 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/9
STD2NB60
THERMAL DATA
R
thj-case
Rthj-a mb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-c a se Max
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink T yp
Maximum Lead Temperat u re F o r Soldering Purp ose
l
Avalanche Cur rent, Rep etit ive or Not-Re petitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
2.5
100
1.5
275
2.6 A
80 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
600 V
Breakdown V oltage
I
DSS
I
GSS
Zer o Gat e V o lt age
Drain Current (V
GS
Gat e-body Leaka ge
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125oC
DS
= ± 30 V
V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c D rain-source On
VGS=10V ID=1.6 A 3.3 3.6 Ω
Resistance
I
D(on)
On State Drain Curre nt VDS>I
D(on)xRDS(on)max
3.3 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capac i t an c e
iss
Out put C apa c itance
oss
Reverse Transf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=1.6A 1.2 2 S
VDS=25V f=1MHz VGS= 0 400
57
7
520
77
9
µA
µA
pF
pF
pF
2/9
STD2NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
d(on)
Turn-on Time
r
Rise Time
t
VDD=300V ID=1.6A
=4.7 Ω VGS=10V
R
G
11
7
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Sour ce Cha rge
gs
Gate-Drain Charge
gd
VDD=480V ID=3.3 A VGS=10V 15
6.2
5.6
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
t
r(Voff)
t
t
Of f - voltage Rise Time
Fall Time
f
Cross-ov er Time
c
VDD=480V ID=3.3A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
11
13
18
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. M ax. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Curre nt
(•)
Source-drain Curre nt
(pulsed)
(∗) For ward On Vo ltage ISD=3.3A VGS=0 1.6 V
Reverse Recov er y
rr
Time
Reverse Recov er y
rr
= 3.3 A di/dt = 100 A /µs
I
SD
=100V Tj=150oC
V
DD
(see test circuit, figure 5)
500
2.1
Charge
Reverse Recov er y
8.5
Current
17
11
22 nC
16
18
25
3.3
13.2
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/9
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