SGS Thomson Microelectronics STD2NB40 Datasheet
®
STD2NB40
N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
STD2NB40 400 V < 4 Ω 2 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
■
ADD SUFFIX "T4" FOR ORDERING IN TAPE
DS(on)
DSS
= 3.5
R
DS(on)
I
D
Ω
& REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTI BLE
POWER SUPPLIES AND MOTOR DRIVE
3
2
IPAK
TO-251
(Suffix "-1")
1
(Suffix "T4")
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
(•) Pulse width limited by safe operating area (1) ISD ≤2A, di/dt ≤ 200 A/µs, VDD ≤ V
July 1999
Drain-source Voltage (VGS = 0) 400 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage
GS
I
Drain Current (continuous) at Tc = 25 oC2A
D
I
Drain Current (continuous) at Tc = 100 oC 1.26 A
D
(•) Drain Current (pulsed) 8 A
Total Dissipation at Tc = 25 oC40W
tot
Derating Factor 0.32 W/
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
400 V
30 V
±
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
STD2NB40
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
ELECTRICAL CHARACTERISTICS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
(T
DD
case
= 50 V)
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
I
= 250 µA V
D
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
GS
= 0
3.12
100
1.5
275
2A
26 mJ
400 V
1
10
± 100 nA
o
C/W
oC/W
o
C/W
o
C
µA
µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
234V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =1 A 3.5 4 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
2A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗) Forward
g
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 1 A 0.8 1.6 S
= 0 380
GS
57
17
pF
pF
pF
2/6
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