SGS Thomson Microelectronics STD2NA50T4, STD2NA50-1 Datasheet
STD2NA50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
■ TYPICAL R
DS(on)
= 3.25 Ω
■ ± 30V GATE TO SOURCE VOLTA GE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVA LANCHE DATA AT 100
o
C
■ LOW INTRINSIC CAPACITANCES
■ GATE CH ARGE MINIMIZED
■ REDUCED THRESHOLD VO LTA GE SPREA D
■ THROUGH-HO LE IPAK (TO -251) POWE R
PACKAGE IN TU BE (SUFFIX "-1")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
APPLICATIONS
■ MEDIUM CURRENT, HIGH SPEED
SWITCHING
■ SWITCH MODE P OW ER SUP P LIE S (S MP S)
■ CONSUMER AND INDUSTRIAL LIGHTING
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 500 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ) 500 V
V
GS
Gate-source Voltage ± 30 V
I
D
Drain Current (continuous) at Tc = 25 oC 2.2 A
I
D
Drain Current (continuous) at Tc = 100 oC 1.4 A
I
DM
(•) Drain Current (pulsed) 8.8 A
P
tot
Total Dissipation at Tc = 25 oC45W
Derating Factor 0.36 W/
o
C
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area
TYPE V
DSS
R
DS(on)
I
D
STD2NA50 500 V < 4 Ω 2.2 A
March 1996
3
2
1
IPAK
TO-251
(Suffix "- 1")
1
3
DPAK
TO-252
(Suffix "T4")
1/6
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-si n k
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.78
100
1
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERI S TICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max, δ < 1%)
2.2 A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 50 V)
25 mJ
E
AR
Repetitive Avalanche Energy
(pulse width limited by T
j
max, δ < 1%)
1mJ
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(T
c
= 100 oC, pulse width limited by Tj max, δ < 1%)
1.4 A
ELECTRICAL CHARACTERISTICS (T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA V
GS
= 0 500 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating x 0.8 Tc = 125 oC
250
1000µAµA
I
GSS
Gate-Source Leakage
Current (V
DS
= 0)
V
GS
= ± 30 V 100 mA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS ID
= 250 µA 2.25 3 3.75 V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10 V ID = 1.1 A
V
GS
= 10 V ID = 1.1 A Tc = 100oC
3.25 4
8
Ω
Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
2.2 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 1.1 A 0.7 1.9 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 300
55
15
400
70
20
pF
pF
pF
STD2NA50
2/6
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