SGS Thomson Microelectronics STD2N50-1 Datasheet
STD2N50
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
■ TYPICAL R
DS(on)
= 4.5 Ω
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
o
C
■ APPLICATION ORIENTED
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWERSUPPLIES (SMPS)
■ CHOPPER REGULATORS, CONVERTERS,
MOTOR CONTROL, LIGHTING FOR
INDUSTRIAL AND CONSUMER
ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STD 2N50 500 V < 5.5 Ω 2A
December 1996
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
V
DS
Drain - s ource Voltage (VGS= 0) 500 V
V
DGR
Drain- gate Voltage (RGS=20kΩ) 500 V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at Tc=25oC2A
I
D
Drain Current (continuous) at Tc=100oC1.25A
I
DM
(•) Drain Current (pulsed) 8 A
P
tot
Total Di ssipation a t Tc=25oC45W
Derat ing Factor 0.36 W/
o
C
T
stg
St or a ge Tem perature -65 t o 150
o
C
T
j
Max. Operating Jun ction T emperature 150
o
C
(•) Pulsewidth limited bysafe operating area
1
3
2
IPAK
TO-251
(Suffix ”-1”)
1
3
DPAK
TO-252
(Suffix ”T4”)
1/10
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e
2.78
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Uni t
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
2A
E
AS
Single Pul se Avalanche Ener gy
(starti ng Tj=25oC, ID=IAR,VDD=50V)
20 mJ
E
AR
Repetitive Avalanc he Energ y
(pulse width limited by Tjmax, δ <1%)
1.5 mJ
I
AR
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
1.2 A
ELECTRICAL CHARACTERISTICS (T
case
=25oC unless otherwisespecified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain - s ource
Break d own Volta ge
ID=250µAVGS= 0 500 V
I
DSS
Zer o G at e V oltage
Drain Current (V
GS
=0)
V
DS
=MaxRating
V
DS
= Max Rating x 0.8 Tc=125oC
25
250
µA
µA
I
GSS
Gat e- body Leakage
Current (VDS=0)
VGS= ± 20 V ± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage VDS=VGSID=250µA234V
R
DS(on)
St at ic Drain-s our ce O n
Resistance
VGS=10V ID=1A 4.5 5.5 Ω
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
VGS=10V
2A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗)Forward
Tr ansconductance
VDS>I
D(on)xRDS(on)maxID
=1A 0.65 1 S
C
iss
C
oss
C
rss
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VDS=25V f=1MHz VGS=0 200
35
12
270
50
18
pF
pF
pF
STD2N50
2/10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on T ime
Rise Time
VDD=200V ID=1A
RG=50 Ω VGS=10V
(see test circuit, figure 3)
35
85
50
120
ns
ns
(di/dt)
on
Turn-on Current S lope VDD=400V ID=2A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
28 A/ µ s
Q
g
Q
gs
Q
gd
Total Gate Charge
Gat e- Source Charge
Gate-Drain Charge
VDD= 400 V ID=2A VGS=10V 18
5
8
25 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off -voltage Rise Time
Fall Time
Cross-over Time
VDD=400V ID=2A
RG=50 Ω VGS=10V
(see test circuit, figure 5)
25
15
45
35
25
65
ns
ns
ns
SOURCE DRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain C urrent
Source-drain C urrent
(pulsed)
2
8
A
A
V
SD
(∗) Forward On Voltage ISD=2A VGS=0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD=2A di/dt=100A/µs
VDD= 100 V Tj=150oC
(see test circuit, figure 5)
330
2.5
15
ns
µC
A
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
STD2N50
3/10
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