SGS Thomson Microelectronics STD25NE03L Datasheet
STD25NE03L
N - CHANNEL 30V - 0.019 Ω - 25A - TO-251/TO-252
STripFET POWER MOSFET
TYPE V
DSS
R
DS(o n)
I
D
ST D25N E 03L 30 V < 0.025 Ω 25 A
■ TYPICALR
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE
■ APPLICATIONORIENTED
DS(on)
= 0.019 Ω
CHARACTERIZATION
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-ACCONVERTERSIN HIGH
PERFORMANCE VRMs
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS,Etc.)
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area (**)Value limited only by the package
March 1999
Drain-source Voltage (VGS=0) 30 V
DS
Drain- gate Voltage (RGS=20kΩ)30V
DGR
Gate-source Voltage
GS
I
Drain Current (cont in uous) at Tc=25oC20**A
D
I
Drain Current (cont in uous) at Tc=100oC18**A
D
20 V
±
(•) Drain Current (pulsed ) 100 A
Total Dissipation at Tc=25oC45W
tot
Derat ing Factor 0.3 W/
Sto rage Tem perature -65 to 175
stg
T
Max. Operati ng Junct ion Tempe r ature 175
j
o
C
o
C
o
C
1/9
STD25NE03L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature F or Soldering Purpose
l
3.33
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 30 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.62.5V
Sta t ic Drain-sour c e On
Resistance
VGS=10V ID=12.5A
=5V ID= 12.5 A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.019 0. 025
0.030ΩΩ
20 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. M ax. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
= 12.5 A 10 16 S
VDS=25V f=1MHz VGS= 0 1270
350
115
µ
µA
pF
pF
pF
A
2/9
STD25NE03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
t
d(on)
Tur n-on Delay Time
Rise Time
t
r
VDD=15V ID=19A
R
=4.7
G
Ω
VGS=4.5V
28
220
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=24V ID=38A VGS=5V 21
9
11
29 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
t
d(off)
Tur n-of f Delay Time
t
Fall T ime
f
VDD=15V ID=19A
=4.7 Ω VGS=4.5V
R
G
45
35
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise T ime
Fall T ime
f
Cross-over Time
c
VDD=24V ID=38A
=4.7 Ω VGS=4.5V
R
G
(Indu ct iv e Load, see fig. 5)
30
85
125
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. M ax. U nit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
20
100
(pulsed)
(∗)ForwardOnVoltage ISD=25A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 38 A di/dt = 100 A/µs
=15V Tj=150oC
V
DD
(see test circuit, fig. 5)
45
60
Charge
Reverse Recovery
2.5
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
(∗) Pulsed:Pulse duration = 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area
SafeOperating Area ThermalImpedance
3/9
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