SGS Thomson Microelectronics STD20NE06 Datasheet
STD20NE06
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STD20NE06 60 V < 0.040 Ω 20 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
=0.032 Ω
CHARACTERIZATION
■ FOR THROUGH-HOLE VERSIONCONTACT
SALESOFFICE
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremelyhigh packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb o l Para meter Value Uni t
V
V
V
I
DM
P
dv/ dt Peak Diode Recov ery vo lt age sl ope 7 V/ns
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 36 A,di/dt ≤ 300 A/µs, VDD≤ V
January 1998
Drain-source Voltage (VGS=0) 60 V
DS
Drain- gate Voltage ( RGS=20kΩ)
DGR
Gat e- source Volt age ± 20 V
GS
I
Drain Current (c on t in uous) at Tc=25oC 20** A
D
I
Drain Current (c on t in uous) at Tc=100oC17A
D
60 V
(•) Drain Current (pulsed) 80 A
Tot al Dissip at i on at Tc=25oC50W
tot
Derating Factor 0.33 W/
Sto rage T emperat ure -65 to 175
stg
T
Max. Oper at in g Junc t io n Temperatur e 175
j
(**) Value limited only by the package
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/8
STD20NE06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lu e Uni t
I
AR
E
Ther mal Resist ance Junction- case Max
Ther mal Resist ance Junction- ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Tempera t ure For Sold ering Purpose
l
Avalanche Current, Repetit i v e or Not-Repetitive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
3.0
100
1.5
275
20 A
80 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
60 V
Breakdown Voltage
I
DSS
I
GSS
Zer o Gate Vo lt age
Drain Cur re nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
234V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID=10A 0.032 0.04 Ω
Resistance
I
D(on)
On State Drain Cu rr e nt VDS>I
D(on)xRDS(on)max
20 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t ance
iss
Out put Capa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=10 A 7 13 S
VDS=25V f=1MHz VGS= 0 2115
260
65
2800
350
90
µA
µA
pF
pF
pF
2/8
STD20NE06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
t
d(on)
t
r
(di/dt)
Q
Q
gs
Q
gd
Turn-on Time
Rise Tim e
Turn-on Current Slope VDD=48V ID=36A
on
Total Gate Charge
g
VDD=30V ID=18A
=4.7 Ω VGS=10V
R
G
=47 Ω VGS=10 V
R
G
VDD=48V ID=36A VGS=10V 50
Gat e-Sourc e Charge
Gate-Drain Charge
28
85
250 A/µs
13
18
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
t
r(Voff)
t
t
Of f - voltage Rise T im e
Fall Time
f
Cross-over Time
c
VDD=48V ID=36A
=4.7 Ω VGS=10V
R
G
12
25
40
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulseduration =300 µs, duty cycle 1.5 %
(•) Pulse widthlimited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward O n Vo lt age ISD=20A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
= 36 A di/dt = 10 0 A/µs
I
SD
=30V Tj=150oC
V
DD
75
245
Charge
Reverse Recover y
6.5
Current
40
115
70 nC
16
35
55
20
80
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
Safe Operating Area ThermalImpedance
3/8
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