SGS Thomson Microelectronics STD20NE03L Datasheet
STD20NE03L
N - CHANNEL ENHANCEMENT MODE
” SINGLE FEATURE SIZE ” POWER MOSFET
TYPE V
DSS
R
DS(on )
I
D
STD20NE03L 30 V < 0.020 Ω 20 A
■ TYPICALR
■ EXCEPTIONALdv/dt CAPABILITY
■ 100% AVALANCHETESTED
■ LOW GATE CHARGE A 100
■ APPLICATIONORIENTED
DS(on)
= 0.016Ω
o
C
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latestdevelopmentof
SGS-THOMSON unique ”Single Feature Size”
strip-based process. The resulting transistor
shows extremely high packingdensity for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturingreproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
SOLENOIDANDRELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERSIN HIGH
PERFORMANCEVRMs
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BAG,LAMPDRIVERS,Etc.)
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt(
T
(•) Pulse width limited by safe operatingarea (1)ISD≤ 40 A,di/dt ≤ 300 A/µs, VDD≤ V
(**) Value limited only by the package
December 1997
Drain-sourc e Vol t ag e (VGS=0) 30 V
DS
Drain- gate Voltag e (RGS=20kΩ)
DGR
Gate- source Voltage ± 15 V
GS
I
Drain Cur rent ( c on t in uous) at Tc=25oC 20** A
D
I
Drain Cur rent ( c on t in uous) at Tc=100oC 20** A
D
30 V
(•) Drain Current (pulsed) 100 A
Total Dissipation at Tc=25oC50W
tot
Derating F act or 0.33 W/
1) Peak Diode Recover y v olt ag e slope 7 V/ns
St orage Te mperatu re -65 to 175
stg
T
Max. Operat ing Junction T emperat ure 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
STD20NE03L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sin k
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Value Uni t
I
AR
E
Ther mal Resist ance Junctio n-case Max
Ther mal Resist ance Junctio n-ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead T emperat ure For Soldering Purpose
l
Avalanche Current , Repet it ive or Not - Re petitive
(pulse width limited b y T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max, δ <1%)
j
3
100
1.5
275
20 A
140 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
(BR)DSS
Drain-sourc e
=250µAVGS=0
I
D
30 V
Breakdown Volt age
I
I
DSS
GSS
Zer o G at e Volt age
Drain Cur rent (V
GS
Gat e-body Le akage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 15 V
V
GS
1
10
± 100 nA
ON (∗)
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
11.82.5V
Voltage
R
DS(on)
I
D(on)
Stati c D rain-source On
Resistance
VGS=10V ID=10A
=5V ID=10A
V
GS
On St at e Dra in Cu rr e nt VDS>I
D(on)xRDS(on)max
0.016 0. 0 2
0.026ΩΩ
20 A
VGS=10V
DYNAMIC
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductanc e
C
C
C
Input Capacit an c e
iss
Out put C apa c itance
oss
Reverse T ransf er
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=10A 12 18 S
VDS=25V f=1MHz VGS= 0 1850
450
160
2400
590
210
µA
µA
pF
pF
pF
2/9
STD20NE03L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on Tim e
Rise T ime
t
r
Total Gate Charge
g
Gat e-Sour ce Charge
gs
Gate-Drain Charge
gd
VDD=15V ID=20A
=4.7 Ω VGS=5V
R
G
VDD=24V ID=40A VGS=5V 29
SWITCHINGOFF
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
t
r(Voff)
t
Of f - voltage Rise T ime
t
Fall Time
f
Cross-ov er Tim e
c
VDD=24V ID=40A
=4.7 Ω VGS=5V
R
G
SOURCE DRAIN DIODE
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) Forwar d O n Volt age ISD=20A VGS=0 1.5 V
Reverse Rec overy
rr
Time
Reverse Rec overy
rr
= 40 A di/dt = 100 A/µs
I
SD
=20V Tj=150oC
V
DD
Charge
Reverse Rec overy
Current
25
16033210
38 nC
12
14
25
120
155
33
160
210
20
100
50
0.9
3.5
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/9
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