SGS Thomson Microelectronics STD20N03L Datasheet

STD20NE03L

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE ” POWER MOSFET

TYPE V

DSS

R

DS(on )

I

D

STD20NE03L 30 V < 0.020 Ω 20 A

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ LOW GATE CHARGE A 100

■ APPLICATIONORIENTED

DS(on)

= 0.016Ω

o

C

CHARACTERIZATION

DESCRIPTION

This Power MOSFET is the latestdevelopmentof SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packingdensity for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturingreproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEEDSWITCHING

SOLENOIDANDRELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERSIN HIGH

PERFORMANCEVRMs

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BAG,LAMPDRIVERS,Etc.)

3

2

IPAK

TO-251

(Suffix”-1”)

1

(Suffix ”T4”)

1

DPAK

TO-252

INTERNAL SCHEMATIC DIAGRAM

3

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

dv/ dt(

T

(•) Pulse width limited by safe operatingarea (1)ISD≤ 40 A,di/dt ≤ 300 A/µs, VDD≤ V (**) Value limited only by the package

December 1997

Drain-sourc e Vol t ag e (VGS=0) 30 V

DS

Drain- gate Voltag e (RGS=20kΩ)

DGR

Gate- source Voltage ± 15 V

GS

I

Drain Cur rent ( c on t in uous) at Tc=25oC 20** A

D

I

Drain Cur rent ( c on t in uous) at Tc=100oC 20** A

D

30 V

(•) Drain Current (pulsed) 100 A

Total Dissipation at Tc=25oC50W

tot

Derating F act or 0.33 W/

1) Peak Diode Recover y v olt ag e slope 7 V/ns

St orage Te mperatu re -65 to 175

stg

T

Max. Operat ing Junction T emperat ure 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/9

STD20NE03L

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Value Uni t

I

AR

E

Ther mal Resist ance Junctio n-case Max Ther mal Resist ance Junctio n-ambient Max Ther mal Resist ance Case-sink Ty p Maximum Lead T emperat ure For Soldering Purpose

l

Avalanche Current , Repet it ive or Not - Re petitive (pulse width limited b y T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=25V)

j

max, δ <1%)

j

3

100

1.5

275

20 A

140 mJ

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwise specified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

30 V

Breakdown Volt age

I

DSS

GSS

Zer o G at e Volt age Drain Cur rent (V

GS

Gat e-body Le akage Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125

DS

o

C

= ± 15 V

V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

11.82.5V

Voltage

R

DS(on)

I

D(on)

Stati c D rain-source On Resistance

VGS=10V ID=10A

=5V ID=10A

V

GS

On St at e Dra in Cu rr e nt VDS>I

D(on)xRDS(on)max

0.016 0. 0 2

0.026ΩΩ

20 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

Input Capacit an c e

iss

Out put C apa c itance

oss

Reverse T ransf er

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=10A 12 18 S

VDS=25V f=1MHz VGS= 0 1850

450 160

2400

590 210

µA µA

pF pF pF

2/9

STD20NE03L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

d(on)

Q

Turn-on Tim e Rise T ime

t

r

Total Gate Charge

g

Gat e-Sour ce Charge

gs

Gate-Drain Charge

gd

VDD=15V ID=20A

=4.7 Ω VGS=5V

R

G

VDD=24V ID=40A VGS=5V 29

SWITCHINGOFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

r(Voff)

t

Of f - voltage Rise T ime

t

Fall Time

f

Cross-ov er Tim e

c

VDD=24V ID=40A

=4.7 Ω VGS=5V

R

G

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 % (•) Pulse width limited by safe operating area

Source-drain Current

(•)

Source-drain Current (pulsed)

(∗) Forwar d O n Volt age ISD=20A VGS=0 1.5 V

Reverse Rec overy

rr

Time Reverse Rec overy

rr

= 40 A di/dt = 100 A/µs

I

SD

=20V Tj=150oC

V

DD

Charge Reverse Rec overy Current

25

16033210

38 nC 12 14

25

120 155

33

160 210

20

100

50

0.9

3.5

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Area ThermalImpedance

3/9