SGS Thomson Microelectronics STD1NC60 Datasheet
STD1NC60
N-CH A NNEL 60 0V - 7Ω - 1.4A - DPAK/IPAK
PowerMesh™II MOSFET
TYPE V
STD1NC60 600 V < 8
■ TYPICAL R
■ EXTREMELY HIGH dv /d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
(on) = 7 Ω
R
DS(on)
I
D
Ω
1.4 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
2
1
1
IPAK
TO-251
INTERNAL SCHEMATIC DIAGRAM
DPAK
TO-252
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
(1)
j
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
Drain Current (pulsed) 5.6 A
Total Dissipation at TC = 25°C
Derating Factor 0.28 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1)ISD ≤1.4A, di/ dt ≤100A/µs, VDD ≤ V
600 V
600 V
1.4 A
0.9 A
35 W
, Tj ≤ T
(BR)DSS
JMAX
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
(•)Pu l se width limited by safe operati ng area
.
1/9December 2000
STD1NC60
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 3.6 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W
Rthj-sink Thermal Resistance case-sink Typ 1.5 °C/W
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 275 °C
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
1.4 A
70 mJ
ID = 250 µA, VGS = 0 600
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
10 µA
V
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= VGS, ID = 250µA
DS
VGS = 10V, ID = 0.7 A
234V
78
Resistance
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max,
1.4 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 26 pF
Reverse Transfer
Capacitance
ID= 0.7A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
1.25 S
160 pF
3.8 pF
Ω
2/9
STD1NC60
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time VDD = 300V, ID = 0.7 A
RG= 4.7Ω VGS = 10V
t
r
Q
g
Q
gs
Q
gd
Rise Time 8 ns
Total Gate Charge
Gate-Source Charge 2.8 nC
Gate-Drain Charge 2.8 nC
(see test circuit, Figure 3)
V
= 480V, ID = 1.4 A,
DD
V
= 10V
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
r(Voff)
t
t
Off-voltage Rise Time
f
c
Fall Time 9 ns
Cross-over Time 34 ns
= 480V, ID = 1.4 A,
DD
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 1.4 A
(2)
Source-drain Current (pulsed) 5.6 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 950 nC
ISD = 1.4 A, VGS = 0
I
= 1.4 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Reverse Recovery Current 3.8 A
8ns
8.5 11.5 nC
25 ns
1.6 V
500 ns
Thermal Imp e danceSafe Operating Area
3/9
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