SGS Thomson Microelectronics STD1NC40 Datasheet
STD1NC40-1
N - CHANNEL 400V - 8Ω - 1A - IPAK
PowerMESHΙΙ MOSFET
PRELIMINARY DATA
■
TYPICAL R
DS(on)
= 8
Ω
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH
OVERLAY
ΙΙ
process, STMicroelectronics has
designed an advanced family of power MOSFETs
with outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
DS(on)
per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE LOW POWER SUPPLIES
(SMPS)
■
CFL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 400 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ)
400 V
V
GS
Gate-source Voltage
±
30 V
I
D
Drain Current (continuous) at Tc = 25 oC1A
I
D
Drain Current (continuous) at Tc = 100 oC 0.63 A
I
DM
(•) Drain Current (pulsed) 4 A
P
tot
Total Dissipation at Tc = 25 oC25W
Derating Factor 0.2 W/
o
C
dv/dt Peak Diode Recovery voltage slope 3 V/ns
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area (1) ISD ≤1A, di/dt ≤ 100 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STD1NC40-1 400 V < 10 Ω 1 A
3
2
1
IPAK
TO-251
(Suffix "-1")
®
1/5
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
5
100
1.5
275
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
1A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 oC, ID = IAR, V
DD
= 50 V)
20 mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA V
GS
= 0
400 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating Tc = 125 oC
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 30 V
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= VGS ID = 250 µA
234V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V ID = 0.5 A 8 10 Ω
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
1A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(∗) Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 1 A 0.4 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 100
25
2
pF
pF
pF
STD1NC40-1
2/5
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