SGS Thomson Microelectronics STD1NC40 Datasheet

STD1NC40-1
N - CHANNEL 400V - 8 - 1A - IPAK
PowerMESHΙΙ MOSFET
PRELIMINARY DATA
TYPICAL R
DS(on)
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
ΙΙ
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest R
DS(on)
per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS
SWITCH MODE LOW POWER SUPPLIES (SMPS)
CFL
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0) 400 V
V
DGR
Drain- gate Voltage (RGS = 20 kΩ)
400 V
V
GS
Gate-source Voltage
±
30 V
I
D
Drain Current (continuous) at Tc = 25 oC1A
I
D
Drain Current (continuous) at Tc = 100 oC 0.63 A
I
DM
(•) Drain Current (pulsed) 4 A
P
tot
Total Dissipation at Tc = 25 oC25W Derating Factor 0.2 W/
o
C
dv/dt Peak Diode Recovery voltage slope 3 V/ns
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(•) Pulse width limited by safe operating area (1) ISD ≤1A, di/dt ≤ 100 A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX
TYPE V
DSS
R
DS(on)
I
D
STD1NC40-1 400 V < 10 1 A
3
2
1
IPAK
TO-251
(Suffix "-1")
®
1/5
THERMAL DATA
R
thj-case
Rthj-am b
R
thc-sink
T
l
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
5
100
1.5
275
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T
j
max)
1A
E
AS
Single Pulse Avalanche Energy (starting T
j
= 25 oC, ID = IAR, V
DD
= 50 V)
20 mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25 oC unless otherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source Breakdown Voltage
I
D
= 250 µA V
GS
= 0
400 V
I
DSS
Zero Gate Voltage Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating Tc = 125 oC
1
10
µA µA
I
GSS
Gate-body Leakage Current (V
DS
= 0)
V
GS
= ± 30 V
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS ID = 250 µA
234V
R
DS(on)
Static Drain-source On Resistance
VGS = 10V ID = 0.5 A 8 10
I
D(on)
On State Drain Current VDS > I
D(on)
x R
DS(on)max
V
GS
= 10 V
1A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
() Forward
Transconductance
VDS > I
D(on)
x R
DS(on)max
ID = 1 A 0.4 S
C
iss
C
oss
C
rss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
V
DS
= 25 V f = 1 MHz V
GS
= 0 100
25
2
pF pF pF
STD1NC40-1
2/5
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time Rise Time
V
DD
= 200 V ID = 0.5 A
R
G
= 4.7 Ω VGS = 10 V
12 21
ns ns
Q
g
Q
gs
Q
gd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
V
DD
= 320 V ID = 1 A V
GS
= 10 V 4
2
2.5
nC nC nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time Fall Time Cross-over Time
V
DD
= 320 V ID = 1 A
R
G
= 4.7 Ω VGS = 10 V
11 21 10
ns ns ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(•)
Source-drain Current Source-drain Current (pulsed)
1 4
A A
V
SD
(∗) Forward On Voltage ISD = 1 A VGS = 0 1.5 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current
I
SD
= 1 A di/dt = 100 A/µs
V
DD
= 100 V Tj = 150 oC
340
0.95
5.6
ns
µ
C
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
STD1NC4 0-1
3/5
DIM.
mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 2.2 2.4 0.086 0.094 A1 0.9 1.1 0.035 0.043 A3 0.7 1.3 0.027 0.051
B 0.64 0.9 0.025 0.031 B2 5.2 5.4 0.204 0.212 B3 0.85 0.033 B5 0.3 0.012 B6 0.95 0.037
C 0.45 0.6 0.017 0.023
C2 0.48 0.6 0.019 0.023
D 6 6.2 0.236 0.244
E 6.4 6.6 0.252 0.260
G 4.4 4.6 0.173 0.181
H 15.9 16.3 0.626 0.641
L 9 9.4 0.354 0.370 L1 0.8 1.2 0.031 0.047 L2 0.8 1 0.031 0.039
A
C2
C
A3
H
A1
D
L
L2
L1
1 3
= =
B3
B
B6
B2
E
G
= =
= =
B5
2
TO-251 (IPAK) MECHANI CAL DAT A
0068771-E
STD1NC40-1
4/5
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STD1NC40-1
5/5
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