SGS Thomson Microelectronics STD1NB80 Datasheet
STD1NB80
N - CHANNEL 800V - 16Ω - 1A - DPAK/IPAK
PowerMESH MOSFET
PRELIMINARY DATA
TYPE V
STD1NB80 800 V < 20 Ω 1 A
■
TYPICAL R
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
■
ADD SUFFIX "T4" FOR ORDERING IN
DS(on)
DSS
= 16
R
DS(on)
I
D
Ω
TAPE&REEL
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest R
per area, exceptional avalanche
DS(on)
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPP LIES (SMPS)
■
AC ADAPTORS AND BATTE RY CHA RGE RS
FOR HANDHELD EQUIPMENT
3
3
1
2
1
IPAK
TO-251
(Suffix "- 1 ")
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/dt(
T
(•) Pulse width limited by safe operating area (1) ISD
May 1999
Drain-source Voltage (VGS = 0) 800 V
DS
Drain- gate Voltage (RGS = 20 kΩ)
DGR
Gate-source Voltage ± 30 V
GS
I
Drain Current (continuous) at Tc = 25 oC1A
D
I
Drain Current (continuous) at Tc = 100 oC 0.63 A
D
(•) Drain Current (pulsed) 4 A
Total Dissipation at Tc = 25 oC50W
tot
Derating Factor 0.4 W/
) Peak Diode Recovery voltage slope 4.5 V/ns
1
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
≤ 1Α,
di/dt ≤ 200 A/µs, VDD ≤ V
800 V
, Tj ≤ T
(BR)DSS
JMAX
o
C
o
C
o
C
1/6
STD1NB80
THERMAL DATA
R
thj-case
Rthj-am b
Rthc-sink
T
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-Sink Typ
Maximum Lead Temperature For Soldering Purpose
l
AVALANCHE CHARACTERIST ICS
Symbol Parameter Max Value Unit
I
AR
E
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
= 25 oC, ID = IAR, V
j
max)
j
DD
= 50 V)
2.5
100
1.5
275
1A
90 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
= 25 oC unless otherwise specified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
I
= 250 µA V
D
GS
= 0
800 V
Breakdown Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
= Max Rating
V
DS
V
= Max Rating Tc = 125 oC
DS
V
= ± 30 V
GS
1
50
± 100 nA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
= VGS ID = 250 µA
DS
345V
Voltage
R
DS(on)
Static Drain-source On
VGS = 10V ID =0.5 A 16 20 Ω
Resistance
I
D(on)
On State Drain Current VDS > I
V
= 10 V
GS
D(on)
x R
DS(on)max
1A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗) Forward
fs
Transconductance
C
C
C
Input Capacitance
iss
Output Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS > I
V
DS
x R
D(on)
DS(on)max
= 25 V f = 1 MHz V
ID = 0.5 A 0.3 0.6 S
= 0 140
GS
22
2.5
185
27
4
µA
µA
pF
pF
pF
2/6
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