SGS Thomson Microelectronics STD19NE06L Datasheet
STD19NE06L
N - CHANNEL 60V - 0.038 Ω - 19A - TO-251/TO-252
STripFET POWER MOSFET
TYPE V
DSS
R
DS(o n)
I
D
ST D19N E 06L 60 V < 0 . 05 Ω 19 A
■ TYPICALR
■ 100%AVALANCHETESTED
■ LOW GATE CHARGE
■ APPLICATIONORIENTED
DS(on)
= 0.038 Ω
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor showsextremelyhigh packing densityfor low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-ACCONVERTERS
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
February 1999
Drain-source Voltage (VGS=0) 60 V
DS
Drain- gate Voltage (RGS=20kΩ)60V
DGR
Gate-source Voltage
GS
I
Drain Current (cont in uous) at Tc=25oC19A
D
I
Drain Current (cont in uous) at Tc=100oC13A
D
20 V
±
(•) Drain Current (pulsed) 76 A
Total Dissipation at Tc=25oC45W
tot
Derat ing Factor 0.3 W/
Sto rage Tem perature -65 to 175
stg
T
Max. Operati ng Junct ion Tempe r ature 175
j
o
C
o
C
o
C
1/9
STD19NE06L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature F or Soldering Purpose
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pulse A v alan c he Energy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max)
j
3.33
100
1.5
275
19 A
50 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leakage
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain-sour c e On
Resistance
VGS=5V ID=9.5A
= 10V ID=9.5A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.048
0.038
19 A
0.06
0.05
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capacitanc e
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=9.5A 7 14 S
VDS=25V f=1MHz VGS= 0 1350
195
58
µ
µA
Ω
Ω
pF
pF
pF
A
2/9
STD19NE06L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay Time
Rise Time
t
r
VDD=30V ID=15A
R
=4.7
G
Ω
VGS=4.5V
25
105
(Resis t iv e Load, see fig. 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=48V ID=30A VGS=5V 20
8
10
28 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f Delay Time
t
Fall T ime
f
VDD=30V ID=15A
=4.7 Ω VGS=4.5V
R
G
50
20
(Resis t iv e Load, see fig. 3)
t
r(Voff)
t
t
Off-volt age Rise T ime
Fall T ime
f
Cross-over Time
c
VDD=48V ID=30A
=4.7 Ω VGS=4.5V
R
G
(Indu ct iv e Load, see fig. 5)
15
40
60
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
I
SDM
SD
Q
I
RRM
SD
t
Source-drain Current
(•)
Source-drain Current
19
76
(pulsed)
(∗)ForwardOnVoltage ISD=30A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 30 A di/dt = 100 A/µs
=30V Tj=150oC
V
DD
(see test circuit, fig. 5)
80
0.18
Charge
Reverse Recovery
4.5
Current
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
A
ns
µC
A
(∗) Pulsed:Pulse duration = 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area
SafeOperating Area ThermalImpedance
3/9
Loading...