SGS Thomson Microelectronics STD17NE03L Datasheet
STD17NE03L
N - CHANNEL 30V - 0.034Ω - 17A - DPAK/IPAK
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D1 7NE03L 30 V < 0.05 Ω 17 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.034 Ω
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING INTAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transistor shows extremely high packing density for
low on-resistance, rugged avalanche characteristicsand less critical alignmentsteps therefore
a remarkablemanufacturingreproducibility.
APPLICATIONS
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIO AMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
1
2
1
IPAK
TO-251
(Suffix”-1”)
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Recovery voltage slope 6 V/ns
T
(•) Pulse width limited by safeoperating area (1)I
June 1999
Drain-source Voltage (VGS=0) 30 V
DS
Dra in- gate Voltage (RGS=20kΩ)
DGR
Gate -sourc e Vo ltage
GS
I
Drain Current (co ntinuous) at Tc=25oC17A
D
I
Drain Current (co ntinuous) at Tc=100oC12A
D
30 V
20 V
±
(•) Drain C urrent (pulsed) 68 A
Total Dissipation at Tc=25oC35W
tot
Derating Factor 0.23 W/
St orage Temperature -65 to 175
stg
T
Max. Op erating Junc tion Te mperature 175
j
≤
17 A, di/dt≤300 A/µs, V
SD
DD
≤
V
(BR)DSS,Tj
≤
T
JMAX
o
C
o
C
o
C
1/9
STD17NE03L
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Para meter Max V al ue Uni t
I
AR
E
Ther mal Resist ance Junction-c ase Max
Ther mal Resist ance Junction-am b ient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature Fo r S old er ing Pur p ose
l
Avalanche Current, Re petitive or No t -Repetit ive
(pulse width limited by T
Single Pulse Avalanche En ergy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
4.28
100
1.5
275
17 A
50 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAVGS=0
I
D
30 V
Break d own V o lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Cu rr ent (V
GS
Gat e- b ody Le aka ge
Current ( V
DS
=0)
=0)
V
=MaxRating
DS
= Max Rating Tc=125
V
DS
o
C
= ± 20 V
V
GS
1
10
± 100 nA
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold
V
DS=VGSID
= 250 µ A
11.72.5V
Voltage
R
DS(on)
I
D(on)
Static Drain-source On
Resistance
VGS=10V ID=8.5A
=10V ID=8.5A
V
GS
On State Dra in Current VDS>I
D(on)xRDS(on )max
0.034
0.049
17 A
0.05
0.06
VGS=10V
DYNAMIC
µA
µ
Ω
A
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
VDS>I
D(on)xRDS(on )maxID
=8.5 A 5 11 S
Tr ansconductance
C
C
C
Input Cap ac i t an c e
iss
Out put Capacitance
oss
Reverse Transfer
rss
VDS=25V f=1MHz VGS=0 680
160
60
Capacitance
2/9
pF
pF
pF
STD17NE03L
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Q
Q
Q
Turn-on delay Time
t
Rise Time
r
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=15V ID=10A
=4.7 Ω VGS=5V
R
G
VDD=24V ID=22A VGS=5V 13
15
70
18 nC
6
6
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off -voltage Rise T ime
Fall Time
f
Cross-over Ti m e
c
VDD=24V ID=20A
=4.7 Ω VGS=5V
R
G
13
33
55
SOURCEDRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, dutycycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Curr ent
(•)
Source-drain Curr ent
17
68
(pulsed)
(∗) F orward On Voltage ISD=17A VGS=0 1.5 V
Reverse R ec o v ery
rr
Time
Reverse R ec o v ery
rr
= 22 A di/dt = 100 A/µs
I
SD
=15V Tj= 150oC
V
DD
40
0.45
Charge
Reverse R ec o v ery
2.2
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area Thermal Impedance
3/9
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