SGS Thomson Microelectronics STD17N06L, STD17N05L Datasheet
STD17N05L
STD17N06L
N - CHANNEL ENHANCEMENT MODE
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD 17N05L 50 V < 0. 085 Ω 17 A
STD 17N06L 60 V < 0. 085 Ω 17 A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ LOGIC LEVEL COMPATIBLE INPUT
o
■ 175
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
= 0.065 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
STD 17N05L STD17N06L
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
January 1995
Drain - s ource Voltage (VGS=0) 50 60 V
DS
Drain- gate Voltage (RGS=20kΩ)5060V
DGR
Gate-source Voltage ± 15 V
GS
Drain Current (continuous) at Tc=25oC17A
I
D
Drain Current (continuous) at Tc=100oC12A
I
D
(•) Drain Current (pulsed) 68 A
Total D i ssipation at Tc=25oC55W
tot
Derating F actor 0.37 W/
St or a ge Tem perature -65 to 175
stg
Max. Operating Junctio n Temperatur e 175
T
j
o
o
o
C
C
C
1/10
STD17N05L/STD17N06L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead T emperature For Soldering Purp ose
l
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(Tc= 100oC, puls e width limited by Tjmax, δ <1%)
2.73
100
1.5
275
17 A
60 mJ
15 mJ
12 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain - s ource
Break d own Volta ge
Zer o Gate Voltage
Drain Current (VGS=0)
Gat e- body Leakage
ID=250µAVGS=0
for STD17 N05L
for STD17 N06L
VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC
50
60
250
1000µAµA
VGS= ± 15 V ± 100 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n
Resistance
On St ate Dra in Current VDS>I
VGS=5V ID=8.5A
V
=5V ID=8.5A Tc= 100oC
GS
D(on)xRDS(on)max
0.065 0.085
0.17
17 A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=8.5A 5 12 S
VDS=25V f=1MHz VGS=0 700
250
70
1000
350
100
V
V
Ω
Ω
pF
pF
pF
2/10
STD17N05L/STD17N06L
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on Time
t
Rise Time
r
Turn-on C urrent Slope VDD=40V ID=17A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING INDUCTIVE LOAD
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage R ise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAIN DIODE
VDD=30V ID=8.5A
RGS=50 Ω VGS=5V
60
35090500
(see test circuit, figure 3)
130 A/µs
RGS=50 Ω VGS=5V
(see test circuit, figure 5)
VDD=40V ID=17A VGS=5V 18
6
9
VDD=40V ID=17A
RGS=50 Ω VGS=5V
(see test circuit, figure 5)
70
100
180
26 nC
100
150
260
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain Current
(•)
Source-drain Current
17
68
(pulsed)
V
(∗) For w ar d On Volt age ISD=17A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 17 A di/dt = 100 A /µs
VDD=30V Tj=150oC
(see test circuit, figure 5)
65
0.13
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
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