SGS Thomson Microelectronics STD16NE10L Datasheet
N - CHANNEL 100V - 0.07 Ω - 16A DPAK
TYPE V
DSS
ST D16N E 10L 100 V < 0.10 Ω 16 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ LOW GATE CHARGE
■ HIGHCURRENT CAPABILITY
■ 175
■ LOW THRESHOLDDRIVE
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
o
C OPERATINGTEMPERATURE
DS(on)
= 0.07 Ω
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
R
DS(o n)
I
D
STD16NE10L
STripFET POWER MOSFET
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAY DRIVERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVEENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/dt (
T
(•) Pulse width limited by safe operating area (1)ISD≤16A, di/dt ≤ 300 A/µs, VDD≤ V
Dra in- sour c e Vol ta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Current ( cont inuous) at Tc=25oC16A
I
D
Dra in Current ( cont inuous) at Tc= 100oC11A
I
D
(•) Dr a in Current ( pulsed) 64 A
Tot al Dissipation a t Tc=25oC55W
tot
Der ati ng Fact or 0.36 W/
1) P eak Diode Reco ve ry volta ge slope 7 V/ ns
St orage Temperat ure -65 to 175
stg
Max. Operat ing Junct ion Te m pe ra t ure 175
T
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
May 2000
1/6
STD16NE10L
THERMAL DATA
R
thj-pcb
R
thj-amb
R
thj-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max V alue Unit
I
AR
E
Ther mal Resistanc e Junct ion-PC B oa rd Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature For Soldering Purpos e
l
Avalanche C urrent, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=30V)
j
max)
j
2.73
100
1.5
275
16 A
75 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Volta ge
Drain Current (V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A11.72.5V
Sta t ic Drain -s ource On
Resistance
VGS=10V ID=8A
=5V ID=8A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.07
0.085
16 A
0.085
0.1
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apaci t anc e
iss
Out put Capacitanc e
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=8A 5 9 S
VDS=25V f=1MHz VGS= 0 V 1750
165
45
µ
µA
Ω
Ω
pF
pF
pF
A
2/6
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