SGS Thomson Microelectronics STD16NE06 Datasheet
STD16NE06
N - CHANNEL 60V - 0.07Ω - 16A DPAK/IPAK
STripFET POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D16N E 06 60 V < 0.085 Ω 16 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.07 Ω
CHARACTERIZATION
■ THROUG-HOLEIPAK(TO-251) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWERPACKAGEIN TAPE& REEL
(SUFFIX”T4”)
DESCRIPTION
This PowerMOSFET is the latest developmentof
STMicroelectronicsunique ”STripFET” strip-ba-
sed process.The resulting transistorshows extremely high packing density for low on-resistance,
rugged avalanche characteristics and less critical
alignmentsteps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ SOLENOIDAND RELAY DRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DCCONVERTERS
■ AUTOMOTIVEENVIRONMENT
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix ”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
DM
P
dv/ dt Peak Diode Recovery voltage slope 7 V/ ns
T
(•) Pulsewidth limitedby safeoperating area (1)ISD≤ 16 A, di/dt ≤ 300 A/µs, VDD≤ V
February 2000
Dra in- sour c e Volt age (VGS=0) 60 V
DS
Dra in- gat e Voltage (RGS=20kΩ)60V
DGR
Gat e-source Volt age ± 20 V
GS
I
Dra in Cu rr ent ( continuous) a t Tc=25oC16A
D
I
Dra in Cu rr ent ( continuous) a t Tc=100oC11A
D
(•) Dra in Cu rr ent ( p uls ed ) 64 A
Tot al Dis sipation at Tc=25oC40W
tot
Der ati ng Fact or 0.26 W/
St orage T em pe r ature -65 to 175
stg
T
Max. Operating Junct ion Temperatur e 175
j
(BR)DSS,Tj≤TJMAX
o
C
o
C
o
C
1/9
STD16NE06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum L ead Tem pe ra t ure For Soldering Purpose
l
Avalanche Current, R epetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanche E ner gy
AS
(starting T
=25oC, ID=IAR,VDD=35V)
j
max,δ <1%)
j
3.75
100
1.5
275
16 A
60 mJ
o
C/W
oC/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Thresho ld Voltage VDS=VGSID= 250 µ A 234V
Sta t ic Drain-s our c e On
VGS=10V ID= 8 A 0.07 0.085
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
16 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=8 A 5 9 S
VDS=25V f=1MHz VGS= 0 900
125
35
1200
170
50
µ
µA
Ω
pF
pF
pF
A
2/9
STD16NE06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=30V ID=10A
R
G
=4.7
Ω
VGS=10V
20
45
30
60
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Char ge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=48V ID=16A VGS=10V 25
9.7
6.2
35 nC
SWITCHING OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-voltage Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=48V ID=10A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
25
38
8
11
34
50
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed:Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
16
64
(pulsed)
(∗)ForwardOnVoltage ISD=16A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 16 A di/ dt = 100 A /µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
50
115
Charge
Reverse Recovery
4.5
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
nC
A
SafeOperating Area ThermalImpedance
3/9
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