SGS Thomson Microelectronics STD15NF10 Datasheet
N - CHANNEL 100V- 0.073Ω - 15A TO-252
LOW GATE CHARGE STripFET POWER MOSFET
TYPE V
DSS
ST D15N F 10 100 V < 0.08 Ω 15 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.073 Ω
CHARACTERIZATION
■ SURFACE-MOUNTINGDPAK (TO-252)
POWERPACKAGEIN TAPE & REEL
(SUFFIX”T4”)
DESCRIPTION
This MOSFET series realized with
STMicroelectronicsunique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
applications. It is also intended for any
applicationswith low gate drive requirements.
R
DS(on)
I
D
STD15NF10
PRELIMINARY DATA
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
E
AS
T
(•) Pulse width limitedby safe operatingarea (2) starting Tj
April 2000
Dra in- sour c e Volta ge (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Voltage ± 20 V
GS
Dra in Cu rr ent (cont inuous) at Tc=25oC15A
I
D
Dra in Cu rr ent (cont inuous) at Tc= 100oC10A
I
D
(•) Dra in Cu rr ent (pulsed) 60 A
Tot al Dissipation at Tc=25oC45W
tot
Der ati ng F a c tor 0.3 W/
1 ) Peak Diode R ecovery volt a ge slope 9 V/ ns
(2) Single Pulse Av alan c he En er gy 75 mJ
St orage T emperat ur e -65 to 175
stg
Max. Operating Jun c t ion Tem pe ra tur e 175
T
j
=25oC, ID=24A, VDD= 50V (1) ISD≤ 80 A, di/dt ≤ 300A/µs, VDD≤ V
(BR)DSS,Tj≤TJMA
o
C
o
C
o
C
1/6
STD15NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Maximum Lead Tempe ra t ure For Solder ing Purpose
l
3.33
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Voltage
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gat e- bod y Leak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s ource On
VGS=10V ID= 7.5 A 0.073 0.08 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
15 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t anc e
iss
Out put Capac it ance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=7.5 A 20 S
VDS=25V f=1MHz VGS= 0 870
125
52
µA
µ
pF
pF
pF
A
2/6
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