SGS Thomson Microelectronics STD150NH02L Datasheet

STD150NH02L

N-CHANNEL 24V - 0.003 Ω - 150A ClipPAK™/IPAK

STripFET™ III POWER MOSFET

PRELIMINARY DATA

TYPE

V

DSS

STD150NH02L 24 V < 0.0035

■ TYPICAL R

■ TYPICAL R

■ R

DS(ON)

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER

(on) = 0.003 Ω @ 10 V

DS

(on) = 0.005 Ω @ 5 V

DS

* Qg INDUSTRY’s BENCHMARK

R

DS(on)

I

D

150 A

Ω

PACKAGE IN TUBE (SUFFIX “- 1 ")

■ SURFACE-MOUNTING POWER PACKAGE

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

The STD150NH02L utilizes the latest advanced design

rules of ST’s proprietary STripFET™ technology. This
novel 0.6µ process utilizes also unique metallization
techniques that couple to a "bondless" assembly
technique result in outstanding performance with
standard DPAK outline. It is therefore ideal in high
performance DC-DC converter applications where
efficiency it to be achieved at very high out currents.

APPLICATIONS

■ SPECIFICALL Y D ESIGNED AND OP TIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

2

1

ClipPak™

IPAK

(Suffix “T4”)

TO-251

(Suffix “-1”)

INTERNAL SCHEMATIC DIAGRAM

3

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

spike(1)

V

DS

V

DGR

V

GS

I

D

I

D

(2)

I

DM

P

tot

E

AS

T

stg

T

j

September 2003

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

Drain-source Voltage Rating 30 V
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

24 V

24 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

150 A

95 A
Drain Current (pulsed) 600 A
Total Dissipation at TC = 25°C

125 W

Derating Factor 0.83 W/°C

(3)

Single Pulse Avalanche Energy 900 mJ
Storage Temperature
Max. Operating Junction Temperature

-55 to 175 °C

1/9

STD150NH02L

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

1.2
100
275

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 25 mA, VGS = 0

V

(BR)DSS

Drain-source

I

D

24 V

Breakdown Voltage

= 20 V

V

DS

V

= 20 V TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(4)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 10 V ID = 75 A

V

GS

V

= 5 V ID = 75 A

GS

= 250 µA

D

1 1.8 V

0.003

0.005

0.0035

0.0065

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(4)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 10 V ID= 40 A

DS

= 15V f = 1 MHz VGS = 0

V

DS

52 S

4450

1126

141

µA
µA

Ω
Ω

pF
pF
pF

2/9

R

G

Gate Input Resistance f = 1 MHz Gate DC Bias = 0

1.6

Ω

Test Signal Level = 20 mV
Open Drain

STD150NH02L

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 75 A

t

d(on)

t

Turn-on Delay Time

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

Q

gs

Q

gd

Q

oss

Q

gls

Total Gate Charge

g

Gate-Source Charge
Gate-Drain Charge

(5)

Output Charge

(6)

Third-quadrant Gate Charg e

= 16V ID= 150A VGS= 10 V

V

DD

V

= 16 V VGS= 0 V

DS

V

< 0 V VGS= 10 V

DS

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 75 A

t

d(off)

t

Turn-off Delay Time

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1)

Garanted wh en external Rg=4.7 Ω and tf < t

(2)

Pulse width limited by safe operating area

3

(

) Starting Tj = 25 oC, ID = 150A, VDD = 10V
.
.

Source-drain Current
Source-drain Current (pulsed)

(4)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

fmax

I

= 75 A VGS = 0

SD

= 150 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 5)

.

(4)
(5)
(6)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

Q

oss = Coss

Gate charge for synchronous operation

*∆ V

in , Coss = Cgd + Cds .

14

224

69

93 nC

13

9
27 nC
64 nC

69
40 54

150
600

1.3 V

47
58

2.5

See Appendix A

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

3/9