SGS Thomson Microelectronics STD13003 Datasheet
®
HIGH VOLTAGE FAS T-SWITCHING
■ REVERSE PINS O UT Vs STAN DARD IPA K
(TO-251) / DPAK (TO-252) PACKAGES
■ MEDIUM VOLTAGE CAPABILITY
■ LOW SPREAD OF DYNA M IC PARA ME TERS
■ MINIMUM LO T- TO - LOT SPREAD F O R
RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED
■ SURFACE-MOUNT ING DPA K (TO-252)
POWER PACKAGE IN TAPE & REEL (Suffix
"T4")
■ THROUGH-HO L E IPA K (TO-251) PO WE R
PACKA GE IN TU BE (Suf fix "- 1" )
APPLICATIONS:
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ SWITCH MODE POWER SU PPLIES
STD13003
NPN POWER TRANSISTOR
1
3
IPAK
TO-251
(Suffix "-1" )
1
2
3
DPAK
TO-252
(Suffix "T4 ")
DESCRIPTION
INTER NAL SCH E M ATI C DIAG RA M
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collector-Emitter Voltage (VBE = 0) 700 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage
EBO
= 0, IB = 0.75 A, tp < 10µs, Tj < 150oC)
(I
C
Collector Current 1.5 A
I
C
Collector Peak Current (tp < 5 ms) 3 A
CM
I
Base Current 0.75 A
B
Base Peak Current (tp < 5 ms) 1.5 A
BM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
T
Max. Operating Junction Temperature 150
j
BV
EBO
V
o
C
o
C
September 2001
1/8
STD13003
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
6.25
100
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
I
CEV
Collector Cut-off
Current (V
Emitter-Base
EBO
= -1.5V)
BE
= 700V
V
CE
V
= 700V T
CE
I
= 10 mA 9 18 V
E
= 125oC
j
1
5
mA
mA
Breakdown Voltage
(I
= 0)
C
V
CEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(I
= 0)
B
∗ Collector-Emitter
V
CE(sat)
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
Saturation Voltage
h
∗ DC Current Gain IC = 0.5 A VCE = 2 V
FE
I
= 10 mA
C
L = 25 mH
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.25 A
C
I
= 1.5 A IB = 0.5 A
C
IC = 0.5 A IB = 0.1 A
I
= 1 A IB = 0.25 A
C
Group A
Group B
I
= 1 A VCE = 2 V
C
400 V
0.5
1
3
1
1.2
8
15
5
20
35
25
V
V
V
V
V
RESISTIVE LOAD
t
Rise Time
r
s
t
f
Storage Time
Fall Time
t
INDUCTIVE LOAD
t
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronic s sales office for delivery details.
s
Storage Time
I
= 1 A VCC = 125 V
C
I
= 0.2 A IB2 = -0.2 A
B1
= 25 µs
T
p
IC = 1 A IB1 = 0.2 A
V
= -5 V L = 50 mH
BE
V
= 300 V
clamp
1
4
0.7
µs
µs
µs
0.8 µs
2/8
STD13003
Safe Operating Areas
DC Current Gain
Derating Curve
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Sat uration Volt ag e
3/8
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