SGS Thomson Microelectronics STD12NE06 Datasheet
STD12NE06
N - CHANNEL 60V - 0.08Ω - 12A - IPAK/DPAK
SINGLE FEATURE SIZE POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
ST D12N E 06 60 V < 0 . 10 Ω 12 A
■ TYPICALR
■ EXCEPTIONALdv/dtCAPABILITY
■ AVALANCHERUGGEDTECHNOLOGY
■ 100 % AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.08 Ω
CHARACTERIZATION
■ ADDSUFFIX ”T4” FORORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics unique ”Single Feature
Size” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkablemanufacturingreproducibility.
APPLICATIONS
■ DC MOTOR CONTROL(DISK DRIVES,etc.)
■ DC-DC& DC-AC CONVERTERS
■ SYNCHRONOUSRECTIFICATION
3
2
IPAK
TO-251
(Suffix”-1”)
1
(Suffix”T4”)
1
DPAK
TO-252
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
T
(•) Pulse width limited by safe operating area (1)ISD≤ 12 A, di/dt ≤ 200 A/µs,VDD≤ V
March 1999
Drain-source Voltage (VGS=0) 60 V
DS
Drain- g at e Voltage (RGS=20kΩ)60V
DGR
Gate-source Voltage ± 20 V
GS
I
Drain Cur rent (c ont in uous ) at Tc=25oC12A
D
I
Drain Cur rent (c ont in uous ) at Tc=100oC8A
D
(•) Drain Current (pulsed) 48 A
Total Dissipation at Tc=25oC35W
tot
Derat ing F ac tor 0.23 W/
1 ) Peak Diode Recover y voltage s lope 6 V/ ns
Sto rage Temperat ure -65 to 175
stg
T
Max. Operating Junct ion Tempe r at ure 175
j
(BR)DSS,Tj≤TJMAX
o
o
o
C
C
C
1/10
STD12NE06
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Valu e Unit
I
AR
E
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Temperatu re For Soldering Purpos e
l
Avalanche C urrent, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pul se Avalanc he Ener gy
AS
(starting T
=25oC, ID=IAR,VDD=25V)
j
max)
j
4.3
100
1.5
275
12 A
45 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS=0 60 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 100oC
V
DS
V
=± 20 V
GS
1
10
100 nA
±
ON(∗)
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µA 234V
Sta t ic Drain-s our c e On
VGS=10V ID= 6 A 0.08 0.10
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on )max
12 A
VGS=10V
DYNAMIC
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=6 A 6 S
VDS=25V f=1MHz VGS= 0 760
100
30
1000
140
45
µ
µA
Ω
pF
pF
pF
A
2/10
STD12NE06
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHINGON
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
VDD=30V ID=6A
R
=4.7
G
Ω
VGS=10V
10
35
15
50
(see test circuit, figure 3)
Q
Q
Q
Tot al Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
VDD=40V ID=12A VGS=10V 20
5
7
30 nC
SWITCHINGOFF
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
t
r(Voff)
t
t
Off-volt age Rise Time
Fall T ime
f
Cross-over Tim e
c
VDD=48V ID=12A
=4.7 Ω VGS=10V
R
G
(see test circuit, figure 5)
18
30
7
10
25
45
SOURCEDRAINDIODE
Symbol Parameter Test Condit ions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5%
(•) Pulse width limited by safe operating area
Source-drain Current
(•)
Source-drain Current
12
48
(pulsed)
(∗)ForwardOnVoltage ISD=12A VGS=0 1.5 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
ISD= 12 A di/ dt = 100 A/µs
=30V Tj= 150oC
V
DD
(see test circuit, figure 5)
70
0.21
Charge
Reverse Recovery
6
Current
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µ
A
C
SafeOperating Area ThermalImpedance
3/10
Loading...