SGS Thomson Microelectronics STD12N10L Datasheet
STD12N10L
N - CHANNEL 100V - 0.12 Ω - 12A TO-252
LOW THRESHOLD POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(o n)
I
D
ST D12N 10L 100 V < 0.15 Ω 12 A
■ TYPICALR
■ AVALANCHERUGGEDTECHNOLOGY
■ 100%AVALANCHETESTED
■ HIGHCURRENT CAPABILITY
■ 175
■ LOW THRESHOLDDRIVE
■ FORTHROUGH-HOLE VERSION CONTACT
o
C OPERATINGTEMPERATURE
DS(on)
= 0.12 Ω
SALESOFFICE
APPLICATIONS
■ HIGHCURRENT, HIGH SPEEDSWITCHING
■ SOLENOIDAND RELAYDRIVERS
■ MOTORCONTROL, AUDIOAMPLIFIERS
■ DC-DC& DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT(INJECTION,
ABS, AIR-BG, LAMPDRIVERS,Etc.)
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
T
(•) Pulse width limited by safe operating area
November 1999
Drain-source Voltage (VGS= 0) 100 V
DS
Drain- g at e Voltage (RGS=20kΩ) 100 V
DGR
Gate-source Voltage
GS
I
Drain Cur rent (c ont in uous ) at Tc=25oC12A
D
I
Drain Cur rent (c ont in uous ) at Tc=100oC8A
D
15 V
±
(•) Drain Current (pulsed) 48 A
Total Dissipation at Tc=25oC50W
tot
Derat ing F ac tor 0.33 W/
Sto rage Temperat ure -65 to 175
stg
T
Max. Operating Junction Tem pe r at ur e 175
j
o
C
o
C
o
C
1/9
STD12N10L
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambient Max
Ther mal Resistanc e Case-sink Ty p
Maximum Lead Te m perature For Soldering Purpos e
l
3
100
1.5
275
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Vo lt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Curre nt (V
GS
Gat e- bod y Leakag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc= 125oC
V
DS
V
= ± 15 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate Threshold Voltage VDS=VGSID= 250 µA11.62.5V
Sta t ic Drain-s our c e On
Resistance
VGS=10V ID=6A
=5V ID=6A
V
GS
On State Drain Current VDS>I
D(on)xRDS(on )max
0.12
0.17
12 A
0.15
0.2
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input Capaci t ance
iss
Out put Capac itance
oss
Reverse Transfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on )maxID
=6A 6.5 10 S
VDS=25V f=1MHz VGS= 0 800
150
50
µ
µA
Ω
Ω
pF
pF
pF
A
2/9
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