SGS Thomson Microelectronics STD12N06L, STD12N05L Datasheet

STD12N05L
STD12N06L

N - CHANNEL ENHANCEMENT MODE

LOW THRESHOLD POWER MOS TRANSISTOR

TYPE V

DSS

R

DS(on)

I

D

STD 12N05L 50 V < 0.15 Ω 12 A
STD 12N06L 60 V < 0.15 Ω 12 A

■ TYPICAL R

■ AVALANCHE RUGGED TECHNOLOGY

■ 100% AVALANCHE TESTED

■ REPETITIVE AVALANCHE DATA AT 100

■ LOW GATE CHARGE

■ LOGIC LEVEL COMPATIBLE INPUT

o

■ 175

■ APPLICATION ORIENTED

C OPERATING TEMPERATURE

DS(on)

= 0.115 Ω

o

C

CHARACTERIZATION

■ THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

■ SURFACE-MOUNTINGDPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOID AND RELAY DRIVERS

■ REGULATORS

■ DC-DC & DC-AC CONVERTERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

3

2

1

IPAK

TO-251

(Suffix ”-1”)

INTERNAL SCHEMATIC DIAGRAM

1

DPAK

TO-252

(Suffix ”T4”)

3

ABSOLUTE MAXIMUM RATINGS

Symb o l Paramet er Val u e Unit

STD 12N05L STD12N06L

V

V

V

I

DM

P

T

(•) Pulsewidth limited bysafe operating area

November 1996

Drain - s ource Voltage (VGS=0) 50 60 V

DS

Drain- gate Voltage (RGS=20kΩ)5060V

DGR

Gate-source Voltage ± 15 V

GS

Drain Current (continuous) at Tc=25oC12A

I

D

Drain Current (continuous) at Tc=100oC8A

I

D

(•) Drain Current (pulsed) 48 A

Total D i ssipation at Tc=25oC45W

tot

Derating Factor 0.3 W/
St or a ge Tem perature -65 to 175

stg

Max. Operating Junctio n Temperatur e 175

T

j

o
o

o

C
C
C

1/10

STD12N05L/STD12N06L

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Uni t

I

AR

E

E

I

AR

Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum L ead Temperat ur e For Soldering Purpos e

l

Avalanc h e Cu rr ent , Repet itive or Not-R epetitive
(pulse width limited by Tjmax, δ <1%)

Single Pul se Avalanche Ener gy

AS

(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y

AR

(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-R epetitive

(Tc= 100oC, puls e width limited by Tjmax, δ <1%)

3.33
100

1.5

275

12 A

30 mJ

7mJ

8A

o

C/W

o

C/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unless otherwise specified)

case

OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

(BR)DSS

I

DSS

I

GSS

Drain - s ource
Break d own Volta ge

Zer o Gate Voltage
Drain Current (VGS=0)

Gat e- body Leakage

ID=250µAVGS=0

for STD12N05 L
for STD12N06 L

VDS=MaxRating
VDS= Max R ating x 0.8 Tc=125oC

50
60

1

10

VGS= ± 15 V ± 100 nA

Current (VDS=0)

ON (∗)

Symbol Parameter Test Condition s Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID=250µA11.62.5V
St at ic Drain-s our ce O n

VGS=5 V ID=6A 0.115 0.15 Ω

Resistance

I

D(on)

On St ate Dra in Current VDS>I

D(on)xRDS(on)max

12 A

VGS=10 V

DYNAMIC

Symbol Parameter Test Condition s Min. Typ. Max. Unit

(∗)Forward

g

fs

Tr ansconductance

C
C
C

Input Capacitance

iss

Out put Capacitance

oss

Reverse Transfer

rss

Capacitance

VDS>I

D(on)xRDS(on)maxID

=6A 4 8 S

VDS=25V f=1MHz VGS=0 350

150

50

500
200

80

V
V

µA
µA

pF
pF
pF

2/10

STD12N05L/STD12N06L

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

d(on)

(di/dt)

Q
Q
Q

Turn-on Time

t

Rise Time

r

Turn-on C urrent Slope VDD=40V ID=12A

on

Total Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

SWITCHING OFF

Symbol Parameter Test Condition s Min. Typ. Max. Unit

t

r(Voff)

t

Off -voltage R ise Time

t

Fall Time

f

Cross-over Time

c

SOURCE DRAIN DIODE

VDD=25V ID=6A
RG=50 Ω VGS=5V

55

18080260

(see test circuit, figure 3)

120 A/µs
RG=50 Ω VGS=5V
(see test circuit, figure 5)

VDD=40V ID=12A VGS=5V 12

6
5

VDD=40V ID=12A
RG=50 Ω VGS=5V
(see test circuit, figure 5)

40
60

110

18 nC

60
90

160

ns
ns

nC
nC

ns
ns
ns

Symbol Parameter Test Condition s Min. Typ. Max. Unit

I

I

SDM

SD

Source-drain Current

(•)

Source-drain Current

12
48

(pulsed)

V

(∗) F or w ar d On Volt age ISD=12A VGS=0 1.5 V

SD

t

Reverse Recovery

rr

Time

Q

Reverse Recovery

rr

ISD= 12 A di/dt = 100 A/µs
VDD=25V Tj=150oC
(see test circuit, figure 5)

75

0.15

Charge

I

RRM

Reverse Recovery

4

Current

(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area

Safe Operating Areas Thermal Impedance

A
A

ns

µC

A

3/10