SGS Thomson Microelectronics STD12N06, STD12N05 Datasheet
STD12N05
STD12N06
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on)
I
D
STD 12N05 50 V < 0. 15 Ω 12 A
STD 12N06 60 V < 0. 15 Ω 12 A
■ TYPICAL R
■ AVALANCHE RUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100
■ LOW GATE CHARGE
■ HIGH CURRENT CAPABILITY
o
■ 175
■ APPLICATION ORIENTED
C OPERATING TEMPERATURE
DS(on)
= 0.1 Ω
o
C
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX ”-1”)
■ SURFACE-MOUNTINGDPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ REGULATORS
■ DC-DC & DC-AC CONVERTERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
3
2
1
IPAK
TO-251
(Suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
1
DPAK
TO-252
(Suffix ”T4”)
3
ABSOLUTE MAXIMUM RATINGS
Symb o l Paramet er Val u e Unit
ST D12N05 STD12N06
V
V
V
I
DM
P
T
(•) Pulsewidth limited bysafe operating area
December 1996
Drain - s ource Voltage (VGS=0) 50 60 V
DS
Drain- gate Voltage (RGS=20kΩ)5060V
DGR
Gate-source Voltage ± 20 V
GS
Drain Current (continuous) at Tc=25oC12A
I
D
Drain Current (continuous) at Tc=100oC8A
I
D
(•) Drain Current (pulsed) 48 A
Total Di ssipation a t Tc=25oC45W
tot
Derating Factor 0.3 W/
St or a ge Tem perature -65 t o 175
stg
Max. Operating Jun ction T emperature 175
T
j
o
o
o
C
C
C
1/10
STD12N05/STD12N06
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
I
AR
E
E
I
AR
Thermal Resistance Junction - cas e Max
Thermal Resistance Junction- ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For So ldering Purpose
l
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(pulse width limited by Tjmax, δ <1%)
Single Pul se Avalanche Ener gy
AS
(starti ng Tj=25oC, ID=IAR,VDD=25V)
Repetitive Avalanc he Energ y
AR
(pulse width limited by Tjmax, δ <1%)
Avalanc h e Cu rr ent , Repet itive or Not-Rep etitive
(Tc= 100oC, pulse width l imited by Tjmax, δ <1%)
3.33
100
1.5
275
12 A
30 mJ
7mJ
8A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwisespecified)
case
OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain - s ource
Break d own Volta ge
Zer o G at e V oltage
Drain Current (VGS=0)
Gat e- body Leakage
ID=250µAVGS=0
for STD12 N05
for STD12 N06
VDS=MaxRating
VDS= Max Rating x 0.8 Tc=125oC
50
60
1
10
VGS= ± 20 V ± 10 0 nA
Current (VDS=0)
ON (∗)
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID=250µA22.94V
St at ic Drain-s our ce O n
VGS=10V ID=6A 0.1 0.15 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
12 A
VGS=10V
DYNAMIC
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
(∗)Forward
g
fs
Tr ansconductance
C
C
C
Input Capacitance
iss
Out put Capacitance
oss
Reverse Transfer
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=6A 3 5 S
VDS=25V f=1MHz VGS=0 330
150
40
450
250
60
V
V
µA
µA
pF
pF
pF
2/10
STD12N05/STD12N06
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
d(on)
(di/dt)
Q
Q
Q
Turn-on T ime
t
Rise Time
r
Turn-on Current S lope VDD=40V ID=12A
on
Total Gate Charge
g
Gat e- Source Charge
gs
Gate-Drain Charge
gd
SWITCHING OFF
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
t
r(Voff)
t
Off -voltage Rise Time
t
Fall Time
f
Cross-over Time
c
SOURCE DRAINDIODE
VDD=25V ID=6A
RG=50 Ω VGS=10V
40
80
(see test circuit figure)
210 A/µs
RG=50 Ω VGS=10V
(see test circuit figure)
VDD=40V ID=12A VGS=10V 15
6
5
VDD=40V ID=12A
RGS=50 Ω VGS=10V
(see test circuit figure)
30
40
80
60
120
25 nC
45
60
120
ns
ns
nC
nC
ns
ns
ns
Symbol Parameter Test Co ndition s Min. Typ. Max. Unit
I
I
SDM
SD
Source-drain C urrent
(•)
Source-drain C urrent
12
48
(pulsed)
V
(∗) Forward On Voltage ISD=12A VGS=0 1.5 V
SD
t
Reverse Recovery
rr
Time
Q
Reverse Recovery
rr
ISD= 12 A di/dt = 100 A/µs
VDD=25V Tj= 150oC
60
0.12
Charge
I
RRM
Reverse Recovery
4
Current
(∗) Pulsed:Pulse duration = 300 µs, dutycycle 1.5 %
(•) Pulse widthlimited by safeoperating area
Safe Operating Area Thermal Impedance
A
A
ns
µC
A
3/10
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