SGS Thomson Microelectronics STD10NF10 Datasheet
STD10NF10
N-CH A NNEL 100V - 0.115 Ω - 13A IPAK/DPAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
TYPE
V
DSS
STD10NF10 100 V <0.13
■ TYPICAL R
■ EXCEPTIONA L dv/d t CAPABILITY
■ APPLICATION ORIENTED
(on) = 0.115Ω
DS
R
DS(on)
I
D
13 A
Ω
CHARACTERIZATION
■ THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “- 1 ")
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced highefficiency, high-frequency isolate d DC-DC c onverters for
Telecom and Computer a pplications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCY DC-DC CONVERTERS
■ UPS AND MOTOR CONTROL
3
2
1
IPAK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
3
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(
Pulse width l i mited by safe operating area . (1) ISD ≤13A, di/dt ≤300A/ µ s , VDD ≤ V
•)
.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
100 V
100 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 52 A
Total Dissipation at TC = 25°C
13 A
9A
50 W
Derating Factor 0.33 W/°C
(1)
Peak Diode Recovery voltage slope 9 V/ns
(2)
Single Pulse Avalanche Energy 70 mJ
Storage Temperature
Operating Junction Temperature
(2) Starting Tj = 25 oC, ID = 15A, VDD = 50V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
1/10June 2002
STD10NF10
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
3.0
100
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
V
(BR)DSS
Drain-source
= 250 µA, VGS = 0
D
100 V
Breakdown Voltage
V
= Max Rating
DS
V
= Max Rating TC = 100°C
DS
V
= ± 20 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
V
= 10 V ID = 5 A
GS
= 250 µA
D
234V
0.115 0.13
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID=5 A
DS
= 25V, f = 1 MHz, VGS = 0
V
DS
20 S
460
70
30
µA
µA
Ω
pF
pF
pF
2/10
STD10NF10
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 50 V ID = 5 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 80V ID = 10A VGS= 10V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 27 V ID = 5 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1. 5 %.
(
•)Pulse width limited by saf e operating ar ea.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 10 A VGS = 0
SD
= 10 A di/dt = 100A/µs
I
SD
V
= 50 V Tj = 150°C
DD
(see test circuit, Figure 5)
16
25
15.3
3.7
4.7
32
8
90
230
5
21 nC
13
52
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10
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