SGS Thomson Microelectronics STD100NH02L Datasheet

STD100NH02L
N-CHANNEL 24V - 0.0042 - 60A DPAK/IPAK
STripFET™ III POWER MOSFET
TYPE
V
DSS
STD100NH02L 24 V < 0.0048
TYPICAL R
TYPICAL R
DS(ON)
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
(on) = 0.0042 @ 10 V
DS
(on) = 0.005 @ 5 V
DS
* Qg INDUSTRY’s BENCHMARK
R
DS(on)
I
D
60 A
(2)
PACKAGE IN TUBE (SUFFIX “- 1 ")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")
DESCRIPTION
The STD100NH02L utilizes the latest advanced design
rules of ST’s proprieta ry STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
APPLICATIONS
SPECIFICALL Y D ESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
2
1
IP AK
TO-251
(Suffix “-1”)
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
3
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
spike(1)
V
V
V I
D
I
D
I
DM
P
E
AS
T
DS
DGR
GS
(2) (2)
(3)
tot
stg
T
j
Drain-source Voltage Rating 30 V Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)
24 V
24 V Gate- source Voltage ± 20 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C
60 A
60 A Drain Current (pulsed) 240 A Total Dissipation at TC = 25°C
100 W
Derating Factor 0.67 W/°C
(4)
Single Pulse Avalanche Energy 800 mJ Storage Temperature Max. Operating Junction Temperature
-55 to 175 °C
1/12September 2003
STD100NH02L
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose
l
Max Max
1.5 100 275
°C/W °C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 25 mA, VGS = 0
V
(BR)DSS
Drain-source
I
D
24 V
Breakdown Voltage
= 20 V
V
DS
V
= 20 V TC = 125°C
DS
V
= ± 20V
GS
1
10
±100 nA
ON
(5)
I
DSS
I
GSS
Zero Gate Voltage Drain Current (V
GS
Gate-body Leakage Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 30 A
V
GS
V
= 5 V ID = 15 A
GS
= 250 µA
D
1 1.8 V
0.0042
0.005
0.0048
0.009
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(5)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance Input Capacitance
Output Capacitance Reverse Transfer Capacitance
V
= 10 V ID= 30 A
DS
= 15V f = 1 MHz VGS = 0
V
DS
50 S
3940 1020
110
µA µA
Ω Ω
pF pF pF
2/12
R
G
Gate Input Resistance f = 1 MHz Gate DC Bias = 0
1.1
Test Signal Level = 20 mV Open Drain
STD100NH02L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 30 A
t
d(on)
t
Turn-on Delay Time
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 10 V
G
(Resistive Load, Figure 3)
Q
Q
gs
Q
gd
Q
oss
Q
gls
Total Gate Charge
g
Gate-Source Charge Gate-Drain Charge
(6)
Output Charge
(7)
Third-quadrant Gate Charg e
= 10 V ID= 60 A VGS= 10 V
V
DD
V
= 16 V VGS= 0 V
DS
V
< 0 V VGS= 10 V
DS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 10 V ID = 30 A
t
d(off)
t
Turn-off Delay Time
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 10 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(1)
Garanted wh en external Rg=4.7 Ω and tf < t
2
(
) Value limited by wire bonding
(3)
Pulse width limited by safe operating area.
4
(
) Starting Tj = 25 oC, ID = 30A, VDD = 15V .
.
Source-drain Current Source-drain Current (pulsed)
(5)
Forward On Voltage Reverse Recovery Time
Reverse Recovery Charge Reverse Recovery Current
I
= 30 A VGS = 0
SD
= 60 A di/dt = 100A/µs
I
SD
V
= 15 V Tj = 150°C
DD
(see test circuit, Figure 5)
.
fmax
(5)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(6)
Q
oss = Coss
(7)
Gate charge for synchronous operation
*∆ V
in , Coss = Cgd + Cds .
15
200
62
84 nC
12
8
24 nC
56.5 nC
60 35 47
60
240
1.3 V
47 58
2.5
See Appendix A
ns ns
nC nC
ns ns
A A
ns
nC
A
Safe Operating Area Thermal Impedance
3/12
STD100NH02L
Output Characteristics Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
4/12
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