SGS Thomson Microelectronics STD100NH02L Datasheet

STD100NH02L

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK

STripFET™ III POWER MOSFET

TYPE

V

DSS

STD100NH02L 24 V < 0.0048

■ TYPICAL R

■ R

DS(ON)

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER

(on) = 0.0042 Ω @ 10 V

DS

(on) = 0.005 Ω @ 5 V

DS

* Qg INDUSTRY’s BENCHMARK

R

DS(on)

I

D

60 A

(2)

Ω

PACKAGE IN TUBE (SUFFIX “- 1 ")

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL (SUFFIX “T4")

DESCRIPTION

The STD100NH02L utilizes the latest advanced design

rules of ST’s proprieta ry STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.

APPLICATIONS

■ SPECIFICALL Y D ESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

2

1

IP AK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

spike(1)

V

V I

D

I

D

I

DM

P

E

AS

T

DS

DGR

GS

(2) (2)

(3)

tot

stg

T

j

Drain-source Voltage Rating 30 V Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

24 V

24 V Gate- source Voltage ± 20 V Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C

60 A

60 A Drain Current (pulsed) 240 A Total Dissipation at TC = 25°C

100 W

Derating Factor 0.67 W/°C

(4)

Single Pulse Avalanche Energy 800 mJ Storage Temperature Max. Operating Junction Temperature

-55 to 175 °C

1/12September 2003

STD100NH02L

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose

l

Max Max

1.5 100 275

°C/W °C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 25 mA, VGS = 0

V

(BR)DSS

Drain-source

I

D

24 V

Breakdown Voltage

= 20 V

V

DS

V

= 20 V TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(5)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

= VGS I

DS

= 10 V ID = 30 A

V

GS

V

= 5 V ID = 15 A

GS

= 250 µA

D

1 1.8 V

0.0042

0.005

0.0048

0.009

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(5)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

= 10 V ID= 30 A

DS

= 15V f = 1 MHz VGS = 0

V

DS

50 S

3940 1020

110

µA µA

Ω Ω

pF pF pF

2/12

R

G

Gate Input Resistance f = 1 MHz Gate DC Bias = 0

1.1

Ω

Test Signal Level = 20 mV Open Drain

STD100NH02L

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 30 A

t

d(on)

t

Turn-on Delay Time

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

gs

Q

gd

Q

oss

Q

gls

Total Gate Charge

g

Gate-Source Charge Gate-Drain Charge

(6)

Output Charge

(7)

Third-quadrant Gate Charg e

= 10 V ID= 60 A VGS= 10 V

V

DD

V

= 16 V VGS= 0 V

DS

V

< 0 V VGS= 10 V

DS

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 30 A

t

d(off)

t

Turn-off Delay Time

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1)

Garanted wh en external Rg=4.7 Ω and tf < t

2

(

) Value limited by wire bonding

(3)

Pulse width limited by safe operating area.

4

(

) Starting Tj = 25 oC, ID = 30A, VDD = 15V .

.

Source-drain Current Source-drain Current (pulsed)

(5)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 30 A VGS = 0

SD

= 60 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 5)

.

fmax

(5)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(6)

Q

oss = Coss

(7)

Gate charge for synchronous operation

*∆ V

in , Coss = Cgd + Cds .

15

200

62

84 nC

12

8

24 nC

56.5 nC

60 35 47

60

240

1.3 V

47 58

2.5

See Appendix A

ns ns

nC nC

ns ns

A A

ns

nC

A

Safe Operating Area Thermal Impedance

3/12

STD100NH02L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/12