SGS Thomson Microelectronics STD100NH02L Datasheet

STD100NH02L

N-CHANNEL 24V - 0.0042 Ω - 60A DPAK/IPAK

STripFET™ III POWER MOSFET

TYPE

V

DSS

STD100NH02L 24 V < 0.0048

■ TYPICAL R

■ TYPICAL R

■ R

DS(ON)

■ CONDUCTION LOSSES REDUCED

■ SWITCHING LOSSES REDUCED

■ LOW THRESHOLD DEVICE

■ THROUGH-HOLE IPAK (TO-251) POWER

(on) = 0.0042 Ω @ 10 V

DS

(on) = 0.005 Ω @ 5 V

DS

* Qg INDUSTRY’s BENCHMARK

R

DS(on)

I

D

60 A

(2)

Ω

PACKAGE IN TUBE (SUFFIX “- 1 ")

■ SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")

DESCRIPTION

The STD100NH02L utilizes the latest advanced design

rules of ST’s proprieta ry STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.

APPLICATIONS

■ SPECIFICALL Y D ESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY DC/DC CONVERTES

3

2

1

IP AK

TO-251

(Suffix “-1”)

DPAK

TO-252

(Suffix “T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

spike(1)

V

V

V
I

D

I

D

I

DM

P

E

AS

T

DS

DGR

GS

(2)
(2)

(3)

tot

stg

T

j

Drain-source Voltage Rating 30 V
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)

24 V

24 V
Gate- source Voltage ± 20 V
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C

60 A

60 A
Drain Current (pulsed) 240 A
Total Dissipation at TC = 25°C

100 W

Derating Factor 0.67 W/°C

(4)

Single Pulse Avalanche Energy 800 mJ
Storage Temperature
Max. Operating Junction Temperature

-55 to 175 °C

1/12September 2003

STD100NH02L

THERMA L D ATA

Rthj-case

Rthj-amb

T

Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose

l

Max
Max

1.5
100
275

°C/W
°C/W

°C

ELECTRICAL CHARACTERISTICS (T

= 25 °C UNLESS OTHERWISE SPECIFIED)

CASE

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 25 mA, VGS = 0

V

(BR)DSS

Drain-source

I

D

24 V

Breakdown Voltage

= 20 V

V

DS

V

= 20 V TC = 125°C

DS

V

= ± 20V

GS

1

10

±100 nA

ON

(5)

I

DSS

I

GSS

Zero Gate Voltage
Drain Current (V

GS

Gate-body Leakage
Current (V

DS

= 0)

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

V

GS(th)

R

DS(on)

Gate Threshold Voltage
Static Drain-source On

Resistance

= VGS I

DS

= 10 V ID = 30 A

V

GS

V

= 5 V ID = 15 A

GS

= 250 µA

D

1 1.8 V

0.0042

0.005

0.0048

0.009

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(5)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance
Input Capacitance

Output Capacitance
Reverse Transfer
Capacitance

V

= 10 V ID= 30 A

DS

= 15V f = 1 MHz VGS = 0

V

DS

50 S

3940
1020

110

µA
µA

Ω
Ω

pF
pF
pF

2/12

R

G

Gate Input Resistance f = 1 MHz Gate DC Bias = 0

1.1

Ω

Test Signal Level = 20 mV
Open Drain

STD100NH02L

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 30 A

t

d(on)

t

Turn-on Delay Time

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 10 V

G

(Resistive Load, Figure 3)

Q

Q

gs

Q

gd

Q

oss

Q

gls

Total Gate Charge

g

Gate-Source Charge
Gate-Drain Charge

(6)

Output Charge

(7)

Third-quadrant Gate Charg e

= 10 V ID= 60 A VGS= 10 V

V

DD

V

= 16 V VGS= 0 V

DS

V

< 0 V VGS= 10 V

DS

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 30 A

t

d(off)

t

Turn-off Delay Time

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 10 V

(Resistive Load, Figure 3)

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(1)

Garanted wh en external Rg=4.7 Ω and tf < t

2

(

) Value limited by wire bonding

(3)

Pulse width limited by safe operating area.

4

(

) Starting Tj = 25 oC, ID = 30A, VDD = 15V .

.

Source-drain Current
Source-drain Current (pulsed)

(5)

Forward On Voltage
Reverse Recovery Time

Reverse Recovery Charge
Reverse Recovery Current

I

= 30 A VGS = 0

SD

= 60 A di/dt = 100A/µs

I

SD

V

= 15 V Tj = 150°C

DD

(see test circuit, Figure 5)

.

fmax

(5)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(6)

Q

oss = Coss

(7)

Gate charge for synchronous operation

*∆ V

in , Coss = Cgd + Cds .

15

200

62

84 nC

12

8

24 nC

56.5 nC

60
35 47

60

240

1.3 V

47
58

2.5

See Appendix A

ns
ns

nC
nC

ns
ns

A
A

ns

nC

A

Safe Operating Area Thermal Impedance

3/12

STD100NH02L

Output Characteristics Transfer Characteristics

Transconductance Static Drain-source On Resistance

Gate Charge vs Gate-source Voltage Capacitance Variations

4/12

STD100NH02L

Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature

Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature

. .

5/12

STD100NH02L

Fig. 1: Unclamped Inductive Load Test CircuitFig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform

Fig. 3: Switching Times Test Circuits For Resistive

Load

Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times

Fig. 4: Gate Charge test Circuit

6/12

STD100NH02L

TO-251 (IPAK) MECHANI CAL DAT A

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A3 0.7 1.3 0.027 0.051

B 0.64 0.9 0.025 0.031
B2 5.2 5.4 0.204 0.212
B3 0.85 0.033
B5 0.3 0.012
B6 0.95 0.037

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 15.9 16.3 0.626 0.641

L 9 9.4 0.354 0.370
L1 0.8 1.2 0.031 0.047
L2 0.8 1 0.031 0.039

A

C2

L2

E

B2

= =

= =

H

C

A3

A1

B6

L

B

B5

G

= =

D

B3

2

1 3

L1

0068771-E

7/12

STD100NH02L

TO-252 (DPAK) MECHANICAL DATA

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 2.2 2.4 0.086 0.094
A1 0.9 1.1 0.035 0.043
A2 0.03 0.23 0.001 0.009

B 0.64 0.9 0.025 0.035
B2 5.2 5.4 0.204 0.212

C 0.45 0.6 0.017 0.023

C2 0.48 0.6 0.019 0.023

D 6 6.2 0.236 0.244

E 6.4 6.6 0.252 0.260

G 4.4 4.6 0.173 0.181

H 9.35 10.1 0.368 0.397
L2 0.8 0.031
L4 0.6 1 0.023 0.039

A

C2

L2

E

B2

==

H

DETAIL "A"

D

==

C

B

2

1 3

L4

A1

G

==

A2

DETAIL "A"

0068772-B

8/12

STD100NH02L

9/12

STD100NH02L

The power losses associated with the FETs in a Synchronous Buck converter can be
estimated using the equations shown in the table below. The formulas give a good
approximation, for the sake of performance comparison, of how different pairs of devices
affect the converter efficiency. However a very important parameter, the working
temperature, is not considered. The real device behavior is really dependent on how the
heat generated inside the devices is removed to allow for a safer working junction
temperature.
The low side (

The high side (

APPENDIX A

Buck Converter: Power Losses Estimation

SW1

SW2

SW2

) device requires:

• Very low R

• Small Q

• Small C

• Small Q

• The C

gls
oss
rr

gd/Cgs

voltage to avoid the cross conduction phenomenon;

SW1)

• Small R

feedback on the gate

• Small Q

• Low R

g

DS(on)

to reduce conduction losses

DS(on)

to reduce the gate charge losses
to reduce losses due to output capacitance

to reduce losses on SW1 during its turn-on

ratio lower than Vth/Vgg ratio especially with low drain to source

device requires:

and Ls to allow higher gate current peak and to limit the voltage

g

to have a faster commutation and to reduce gate charge losses

to reduce the conduction losses.

10/12

STD100NH02L

High Side Switch (SW1) Low Side Switch (SW2)

conduction

P

P

P

P

P

switching

Recovery Not Applicable

diode

Conduction Not Applicable

)gate(Q

G

Qoss

Parameter Meaning

d Duty-cycle

Q

gsth

Q

gls

Pconduction
Pswitching
Pdiode

Pgate

Qoss

P

Post threshold gate charge
Third quadrant gate charge
On state losses
On-off transition losses
Conduction and reverse recovery diode losses

Gate drive losses
Output capacitance losses

2

d*I *R

LDS(on)SW1

I

+

gd(SW1)gsth(SW1)in

f*V*Q

ggg(SW1)

f*Q*V

oss(SW1)in

2

L

*f*)Q(Q*V

I

g

Zero Voltage Switching

1

2

d−

f*Q*V

deadtimeLf(SW2)

f*V*Q

gggls(SW2)

f*Q*V

)1(*I *R

f*t*I*V

LDS(on)SW2

rr(SW2)in

oss(SW2)in

2

1

Dissipated by SW1 during turn - on

11/12

STD100NH02L

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12/12