SGS Thomson Microelectronics STC5NF20V Datasheet

STC5NF20V

N-CHANNEL 20V - 0.030 Ω - 5A TSSOP8

2.7V-DRIVE STripFET™ II POWER MOSFET

TYPE

V

DSS

STC5NF20V 20 V

■ TYPICAL R

■ ULTRA LOW THRESHOLD

(on) = 0.030 Ω @ 4.5 V

DS

(on) = 0.037 Ω @ 2.7 V

DS

R

DS(on)

< 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V )

I

D

5 A

GATE DRIVE (2.7 V)

■ STANDARD OUTLI NE FO R EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

DESCRIPTION

This Power MOSFET is the latest dev elo pment of

STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

APPLICATIONS

■ DC MOTOR DRIVE

■ DC-DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

■ POWER MANAGEMENT IN

PORTABLE/DESKTOP PCs

TSSOP8

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

DS

V

DGR

V

GS

I

D

I

D

(

I

DM

P

tot

(

Pulse widt h l i m i ted by safe operating area.

•)

.

Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ)

20 V 20 V

Gate- source Voltage ± 12 V

Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C

•)

Drain Current (pulsed) 20 A Total Dissipation at TC = 25°C

5A 3A

1.5 W

1/8February 2003

STC5NF20V

THERMA L D ATA

Rthj-pcb Rthj-pcb

T

stg

(*) When Mounted on FR-4 board with 1 inch (**) When Mounted on minimum recommended footprint

Thermal Resistance Junction-PCB (**) Thermal Resistance Junction-PCB (*) Operating Junction Temperature

j

Storage temperature

2

pad, 2 oz of Cu a nd t [ 10 sec

Max Max

100

83.5

-55 to 150

°C/W °C/W

°C °C

ELECTRICAL CHARACTERISTICS (T

= 25 °C unless otherwise specified)

case

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

V

(BR)DSS

Drain-source

= 250 µA, VGS = 0

D

20

Breakdown Voltage

V

= Max Rating

DS

V

= Max Rating TC = 125°C

DS

= ± 12V

V

GS

1

10

±100 nA

ON

(*)

I

DSS

I

GSS

Zero Gate Voltage Drain Current (V

GS

Gate-body Leakage Current (V

DS

= 0)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage Static Drain-source On

Resistance

= VGS ID = 250 µA

DS

= 4.5 V ID = 2.5 A

V

GS

V

= 2.7 V ID = 2.5 A

GS

0.6 V

0.030

0.037

0.040

0.045

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

(*)

g

fs

C

iss

C

oss

C

rss

Forward Transconductance Input Capacitance

Output Capacitance Reverse Transfer Capacitance

V

=15 V ID= 2.5 A

DS

= 15V f = 1 MHz, VGS = 0

V

DS

9.5 S

460 200

50

V

µA µA

Ω Ω

pF pF pF

2/8

STC5NF20V

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 2.5 A

t

d(on)

Turn-on Delay Time

t

r

Rise Time

V

DD

R

= 4.7 Ω VGS = 4.5 V

G

(Resistive Load, Figure 1)

Q

g

Q

gs

Q

gd

Total Gate Charge Gate-Source Charge Gate-Drain Charge

= 16V ID= 5A VGS=4.5V

V

DD

(see test circuit, Figure 2)

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

= 10 V ID = 2.5 A

t

d(off)

Turn-off Delay Time

t

f

Fall Time

V

DD

R

= 4.7Ω, V

G

GS

= 4.5 V

(Resistive Load, Figure 1)

7

33

8.5

1.8

2.4

27 10

11.5 nC

ns ns

nC nC

ns ns

t

d(Voff)

t

c

Off-voltage Rise Time

f

Fall Time Cross-over Time

= 16 V ID = 5 A

V

clamp

R

= 4.7Ω, V

G

GS

(Inductive Load, Figure 3)

= 4.5 V

26 11 21

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

rr

Q

rr

I

RRM

(*)

Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by s afe operating area.

Safe Operating Area

Source-drain Current

(•)

Source-drain Current (pulsed)

(*)

Forward On Voltage Reverse Recovery Time

Reverse Recovery Charge Reverse Recovery Current

I

= 5 A VGS = 0

SD

= 5 A di/dt = 100A/µs

I

SD

V

= 10 V Tj = 150°C

DD

(see test circuit, Figure 3)

Thermal Impedance

5

20

1.2 V

26 13

1

ns ns ns

A A

ns

nC

A

3/8