®
HIGH VOLTAGE FAST-SWITCHING
■ MEDIUM V O LTA GE C A PA B ILI TY
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LO T SPREAD FOR
RELIAB LE OP ERA T ION
■ VERY HIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONIC BA LLAS TS FOR
FLUORESCE NT LIG HT I NG
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capabilit y.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The STBV68 is designed for use in compact
fluorescent lamp application.
STBV68
NPN POWER TRANSISTOR
TO-92
INTERNAL SCHEMAT I C DIAGRAM
ABSOLUTE MA XIMU M RAT INGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
September 2000
Collector-Emitter Voltage (VBE = 0) 600 V
CES
Collector-Emitter Voltage (IB = 0) 400 V
CEO
Emitter-Base Voltage (IC = 0) 9 V
EBO
Collector Current 0.6 A
I
C
Collector Peak Current (tp < 5 ms) 1.2 A
CM
Base Current 0.3 A
I
B
Base Peak Current (tp < 5 ms) 0.6 A
BM
Total Dissipation at T
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
= 25 oC 0.9 W
amb
o
C
o
C
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STBV68
THERMAL DATA
R
thj-amb
Thermal Resistance Junction-ambient Max 140
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specif ied)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CEV
I
EBO
V
CEO(sus)
Collector Cut-off
Current (V
= -1.5 V)
BE
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 600 V 250 µA
V
CE
= 9 V 1 mA
V
BE
I
= 1 mA L = 25mH 400 V
C
Sustaining Voltage
(I
= 0)
B
V
CE(sat)
V
BE(sat)
∗ Collector-Emitter
Saturation Voltage
∗ Base-Emitter
Saturation Voltage
IC = 0.1 A IB = 20 mA
I
= 0.15 A IB = 50 mA
C
I
= 0.25 A IB = 100 mA
C
IC = 0.1 A IB = 20 mA
I
= 0.15 A IB = 50 mA
C
hFE∗ DC Current Gain IC = 0.1 A V
I
= 0.25 A V
C
INDUCTIVE LOAD
t
Fall Time
f
∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %
IC = 0.1 A V
I
= - IB2 = 20 mA L =3 mH 0.3 µs
B1
= 5 V
CE
= 10 V
CE
clamp
0.35
0.8
3.0
7
3
= 300 V
0.75
1.5
5
1.0
1.2
15
6
V
V
V
V
V
2/4