SGS Thomson Microelectronics STBV32 Datasheet
HIGH VOLTAGE FAST-SWITCHING
■ ST13003SILICONIN TO-92 PACKAGE
■ MEDIUMVOLTAGECAPABILITY
■ LOW SPREADOF DYNAMICPARAMETERS
■ MINIMUMLOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■ VERYHIGH SWITCHING SPEED
APPLICATIONS:
■ ELECTRONICBALLASTSFOR
FLUORESCENT LIGHTING
STBV32
NPN POWER TRANSISTOR
DESCRIPTION
The device is manufactured using high voltage
TO-92
Multi Epitaxial Planar technology for high
switchingspeeds andmedium voltage capability.
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintainingthe wide RBSOA.
The STBV32 is designed for use in compact
INTERNAL SCHEMATIC DIAGRAM
fluorescentlamp application.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Emit t e r Voltage ( VBE= 0) 700 V
CES
Collect or-Emit t e r Voltage ( IB= 0) 400 V
CEO
Emitter-Base Vol tage (IC=0) 9 V
EBO
Collect or Current 1.5 A
I
C
Collect or Peak Cu r rent (tp<5ms) 3 A
CM
Base Cu rr ent 0.75 A
I
B
Base P eak Cu rrent (tp<5ms) 1.5 A
BM
Tot al Dissipation at Tc=25oC1.1W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Junc t io n Tempe rature 150
T
j
o
C
o
C
February 2000
1/7
STBV32
THERMAL DATA
R
thj-case
Ther mal Resist an c e Junct io n-c a s e Max 112
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Un it
I
CEV
I
EBO
V
CEO(sus)
V
CE(sat)
V
BE(sat)
h
FE
Collec t or Cut -off
Current (V
=-1.5V)
BE
Emitter Cut-off
Current (I
C
=0)
∗ Co llector-E m itter
Sust aining Voltage
=0)
(I
B
∗ Collector-E mitter
Saturation Voltage
∗ Base-Emitt er
Saturation Voltage
= 700V
V
CE
V
= 700V Tj= 125oC
CE
V
=9V 1 mA
EB
I
=10mA
C
L=25mH
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
=1.5A IB=0.5A
I
C
IC=0.5A IB=0.1A
=1A IB=0.25A
I
C
∗ DC C ur rent Gain IC=0.5A VCE=2V
I
=1A VCE=2V
C
1
5
400 V
0.5
1
3
1.0
1.2
8
5
35
25
RESI STIVE LOAD
t
Rise T ime
r
t
s
t
f
Storage Ti me
Fall Time
INDUCTIV E LOAD
t
∗
Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.
s
Storage Ti me
=1A VCC=125V
I
C
=0.2A IB2=-0.2A
I
B1
=25µs
T
p
IC=1A IB1=0.2A
=-5V L=50mH
V
BE
=300V
V
clamp
0.8 µs
1.0
4.0
0.7
mA
mA
V
V
V
V
V
µs
µs
µs
2/7
STBV32
Safe Operating Area
DCCurrent Gain
DeratingCurve
DC Current Gain
CollectorEmitterSaturationVoltage
BaseEmitter Saturation Voltage
3/7
Loading...