SGS Thomson Microelectronics STP9NK60Z, STP9NF60ZFP, STB9NK60Z, STB9NK60-1 Datasheet
1/13June 2002
STP9NK60Z - STP9NK60ZFP
STB9NK60Z - STB9NK60Z-1
N-CHANNEL 600V - 0.85Ω - 7A TO-220/FP/D2PAK/I2PAK
Zener-Protected SuperMESH™Power MOSFET
■ TYPICAL RDS(on) = 0.85 Ω
■ EXTREMELY HIGH dv /d t C APABILITY
■ IMPROVED ESD CAPABILITY
■ 100% AVALANCHE RATED
■ GATE CHARGE MINIMIZED
■ VERY LOW INTRINSIC C APACITANCES
■ VERY GOOD MANUFACTURING
REPEATIBILITY
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST ’s well established stripbased PowerMESH™ layout. In addition to pushing
on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the
most demanding applications. Such series c om pl ements ST full range of high voltage MOSFE Ts including revolutionary MDmesh™ products.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ IDEAL FOR OFF-LINE POWER SUP PLIE S,
ADAPTORS AND PFC
ORDERING INFORMATION
TYPE V
DSS
R
DS(on)
I
D
Pw
STP9NK60Z
STP9NK60ZFP
STB9NK60Z
STB9NK60Z-1
600 V
600 V
600 V
600 V
< 0.95
Ω
< 0.95 Ω
< 0.95 Ω
< 0.95 Ω
7 A
7 A
7 A
7 A
125 W
30 W
125 W
125 W
SALES TYPE MARKING PACKAGE PACKAGING
STP9NK60Z P9NK60Z TO-220 TUBE
STP9NK60ZFP P9NK60ZFP TO-220FP TUBE
STB9NK60Z B9NK60Z
D
2
PAK
TUBE
STB9NK60ZT4 B9NK60Z
D
2
PAK
TAPE & REEL
STB9NK60Z-1 B9NK60Z-1
I
2
PAK
TUBE
TO-220 TO-220FP
1
2
3
1
2
3
1
3
I2PAK
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
2/13
ABSOLUTE MAXIMUM RATINGS
(l) Pulse wi dth limited by safe operating area
(1) I
SD
≤7A, di/dt ≤200 µA, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
(*) Limited only by maximum temperature allowed
THERMA L D ATA
AVALANCHE CHARACTERISTICS
GATE-SOURCE ZENER DIODE
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage
of external components.
Symbol Parameter Value Unit
TO-220 /
D
2
PAK / I2PAK
TO-220FP
V
DS
Drain-source Voltage (VGS = 0)
600 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
600 V
V
GS
Gate- source Voltage ± 30 V
I
D
Drain Current (continuous) at TC = 25°C
7 7 (*) A
I
D
Drain Current (continuous) at TC = 100°C
4.4 4.4 (*) A
I
DM
(l)
Drain Current (pulsed) 28 28 (*) A
P
TOT
Total Dissipation at TC = 25°C
125 30 W
Derating Factor 1 0.24 W/°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5KΩ) 4000 V
dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns
V
ISO
Insulation Withstand Voltage (DC) - 2500 V
T
j
T
stg
Operating Junction Temperature
Storage Temperature
-55 to 150
-55 to 150
°C
°C
TO-220
I
2
PAK
D
2
PAK
TO-
220FP
Rthj-case Thermal Resistance Junction-case Max 1 4.16 °C/W
Rthj-pcb
Thermal Resistance Junction-pcb Max
(When mounted on minimum Footprint)
30 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
Maximum Lead Temperature For Soldering Purpose
300 °C
Symbol Parameter Max Value Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
7A
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, ID = IAR, VDD = 50 V)
235 mJ
Symbol Parameter Test Conditions Min. Typ. Max. Unit
BV
GSO
Gate-Source Breakdown
Voltage
Igs=± 1mA (Open Drain) 30 V
3/13
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pu l sed: Pulse duration = 300 µs, duty cyc l e 1. 5 %.
2. Pul se width limi te d by safe oper at i ng area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when VDS increase s fr om 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0 600 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
VDS = Max Rating, TC = 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS
= VGS, ID = 100µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 3.5 A 0.85 0.95
Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance VDS = 15 V, ID= 3.5 A 5.3 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V, f = 1 MHz, VGS = 0 1110
135
30
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
VGS = 0V, VDS = 0V to 480 V 72 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
VDD = 300 V, ID = 3.5 A
RG= 4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
19
17
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480 V, ID = 7 A,
VGS = 10V
38
7
21
53
nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
VDD = 300 V, ID = 3.5 A
RG=4.7Ω VGS = 10 V
(Resistive Load see, Figure 3)
43
15
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 300 V, ID = 7 A,
R
G
=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
11
8
20
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
7
28
A
A
VSD (1)
Forward On Voltage
ISD = 7 A, VGS = 0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 7 A, di/dt = 100A/µs
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
480
3.5
14.5
ns
µC
A
STP9NK60Z / STP9NK60ZFP / STB9NK60Z / STB9NK60Z-1
4/13
Thermal Impedance For TO-220/D2PAK/I2PAK
Safe Operating Area For TO-220FPSafe Operating Area For TO-220/D2PAK/I2PAK
Thermal Impedance For TO-220FP
Output Characteristics
Transfer Characteristics
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