SGS Thomson Microelectronics STB9NC60-1 Datasheet
STB9NC60
STB9NC60-1
N-CHANNEL 600V - 0.6Ω - 9A - D2PAK/I2PAK
PowerMesh™II MOSFET
TYPE V
STB9NC60
STB9NC60-1
■ TYPICAL R
■ EXTREMELY HIGH dv/d t C APABILITY
■ 100% AVALANCHE TESTED
■ NEW HIGH VOLTAGE BENCHMARK
■ GATE CHARGE MINIMIZED
DS
DSS
600 V
600 V
(on) = 0.6 Ω
R
DS(on)
< 0.75 Ω
< 0.75 Ω
I
D
9.0 A
9.0 A
DESCRIPTION
The PowerMESH
generation of MESH OVERLAY
™II is the evolution of the first
™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lea ding edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLIES ( SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
3
1
2
1
D2PAK I2PAK
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
(1)
j
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
600 V
600 V
Gate- source Voltage ±30 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
9A
5.7 A
Drain Current (pulsed) 36 A
Total Dissipation at TC = 25°C
125 W
Derating Factor 1.0 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1)ISD ≤9A, di/dt ≤100A/µs, VDD ≤ V
– 55 to 150 °C
, Tj ≤ T
(BR)DSS
JMAX
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt Peak Diode Recovery voltage slope 3.5 V/ns
T
stg
T
(•)Pu l se width limite d by safe operat i ng area
1/10February 2002
STB9NC60 / STPBNC60-1
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.0 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
= 25 °C, ID = IAR, VDD = 50 V)
j
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
9A
850 mJ
ID = 250 µA, VGS = 0 600
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±30V ±100 nA
GS
1µA
50 µA
V
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4.5 A
234V
0.6 0.75 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS =20 V , ID=4.5A 9 S
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 205 pF
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, VGS = 0
DS
1420 pF
35 pF
2/10
STB9NC60 / STPBNC60-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Turn-on Delay Time VDD = 300V, ID = 4.5 A
RG=4.7Ω VGS = 10V
t
r
Q
g
Q
gs
Q
gd
Rise Time 16 ns
Total Gate Charge
Gate-Source Charge 4.5 nC
Gate-Drain Charge 31 nC
(see test circuit, Figure 3)
V
= 480V, ID = 9.0 A,
DD
V
= 10V
GS
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off Delay Time
t
f
Fall Time
VDD = 300 V, ID = 4.5 A
R
= 4.7Ω VGS = 10 V
G
(Resistive Load see, Figure 3)
t
r(Voff)
t
f
t
c
Fall Time
Cross-over Time
Off-voltage Rise Time
= 480V, ID = 9.0 A,
V
DD
RG= 4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
(1)
SD
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Puls e duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 9.0 A
(2)
Source-drain Current (pulsed) 36 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 4.7 µC
ISD = 9 A, VGS = 0
I
= 9 A, di/dt = 100A/µs,
SD
VDD = 100V, Tj = 150°C
(see test circuit, Figure 5)
Reverse Recovery Current 15.5 A
20 ns
55 77 nC
64
32
19
13
32
1.6 V
600 ns
ns
ns
ns
ns
ns
Thermal ImpedanceSafe Operating Area
3/10
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