SGS Thomson Microelectronics STB9NC60 Datasheet
STB9NC60
N - CHANNEL 600V - 0.5Ω -9A D2PAK/I2PAK
PowerMESHII MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB9NC60 600 V < 0 .75 Ω 9.0 A
ν TYPICAL R
ν EXTREMELY HIGH dv/dt CAPABILITY
ν 100% AVALANCHE TESTED
ν NEW HIGH VOLTAGE BENCHMARK
ν GATE CHARGE MINIMIZED
DS(on)
= 0.5 Ω
3
3
2
1
1
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY. The layout
refinements introduced greatly improve the
Ron*area figure of merit while keeping the device
I2PAK
TO-262
(Suffix ”-1”)
D2PAK
TO-263
(Suffix ”T4”)
at the leading edge for what concerns switching
speed, gate charge and ruggedness.
APPLICATIONS
ν HIGH CURRENT, HIGH SPEED SWITCHING
ν SWITH MODE POWER SUPPLIES(SMPS)
ν DC-AC CONVERTERS FOR WELDING
INTERNAL SCHEMATIC DIAGRAM
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIESAND MOTOR DRIVER
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
Drain-source Voltage (VGS=0) 600 V
DS
V
Drain- gate Voltage (RGS=20kΩ)
DGR
Gate-source Voltage ± 30 V
V
GS
I
Drain Current (continuous) at Tc=25oC9.0A
D
I
Drain Current (continuous) at Tc= 100oC5.7A
D
I
(•) Drain Current (pulsed) 36 A
DM
P
Total Dissipation at Tc=25oC125W
tot
Derating Factor 1.0 W/oC
dv/dt(
1) Pe ak Diode Recovery voltage slope 4.5 V/ns
T
Storage Temperature -65 to 150
stg
T
Max. Operating JunctionTemperature 150
j
(•) Pulsewidth limited by safeoperating area (1)ISD≤ 9A, di/dt ≤ 200A/µs, VDD≤ V
600 V
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
January2000
1/9
STB9NC60
THERMAL DATA
R
R
R
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
Thermal R esistance Junction-case Max 1.0
thj-case
Thermal Resistance Junction-ambient Max
thj-amb
Thermal Resistance Case-sink Typ
thc-sink
Maximum Lead Temperature For Soldering Purpose
T
l
I
AvalancheCurrent, Repetitive or Not-Repetitive
AR
(pulse width limited by T
Single Pulse Avalanche En ergy
E
AS
(startin g T
=25oC, ID=IAR,VDD=50V)
j
max)
j
62.5
0.5
300
9A
850 mJ
o
o
o
C/W
C/W
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Drain-source
Breakdown Voltage
Zero Gate Vo ltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
= 250 µAVGS=0
I
D
V
DS
V
=0)
DS
V
GS
=MaxRating
= Max Rating Tc=125oC
= ± 30 V ± 100 nA
600 V
150µA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
I
D(on)
Gate ThresholdVoltage
Static Drain-source On
V
DS=VGSID
VGS= 10V ID= 4.5 A 0.6 0.75 Ω
Resistance
On State Drai n Current VDS>I
VGS=10V
= 250 µA
D(on)xRDS(on)max
234V
9.0 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(∗)Forward
g
fs
Transconductance
C
Input Capacitance
iss
Output Capacitance
C
oss
Reve rse Tra n s fe r
C
rss
Capacitance
VDS>I
D(on)xRDS(on)maxID
=4.5A 10 S
VDS=25V f=1MHz VGS= 0 1400
196
31
µA
pF
pF
pF
2/9
STB9NC60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Turn -on D elay Time
t
d(on)
t
Rise Time
r
Q
Total Gate Charge
g
Gate-Source Charge
Q
gs
Gate-D rain Charge
Q
gd
VDD=300V ID=4.5A
R
=4.7 Ω VGS=10V
G
(Resistive Load, see fig. 3)
VDD= 480 V ID=9.0A VGS=10V 55
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
t
r(Voff)
t
t
Turn -of f D e la y T ime
Fall Time
f
Off-voltage Rise Time
Fall Time
f
Cross-over Time
c
VDD=300V ID=4.5A
R
=4.7 Ω VGS=10V
G
(Resistive Load, see fig. 3)
VDD=480V ID=9.0A
=4.7 Ω VGS=10V
R
G
(Inductive Load, see fig. 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Source-drain Current
I
SD
I
(•)
SDM
V
Source-drain Current
(pulsed)
(∗)ForwardOnVoltage ISD=9A VGS=0 1.6 V
SD
t
Reverse R ecovery
I
rr
Q
RRM
rr
Time
Reverse R ecovery
Charge
Reverse R ecovery
Current
= 9 A di/dt = 100 A/µs
I
SD
= 100 V Tj= 150oC
V
DD
(see test circuit, fig. 5)
20
16
77 nC
4.5
31
64
32
19
13
32
9.036A
600
4.7
15.5
ns
ns
nC
nC
ns
ns
ns
ns
ns
A
ns
µC
A
(∗) Pulsed: Pulse duration= 300µs, duty cycle1.5 %
(•) Pulsewidth limited by safeoperating area
Safe Operating Area ThermalImpedance
3/9
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