SGS Thomson Microelectronics STB9NB50 Datasheet
STB9NB50
N - CHANNEL ENHANCEMENT MODE
Power MESH MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB9N B 50 500 V < 0. 8 5 Ω 8.6 A
■ TYPICALR
■ EXTREMELY HIGH dv/dt CAPABILITY
■ AVALANCHERUGGEDTECHNOLOGY
■ 100% AVALANCHETESTED
■ REPETITIVEAVALANCHE DATA AT 100
■ VERYLOW INTRINSIC CAPACITANCE
■ GATECHARGEMINIMIZED
■ LOW LEAKAGE CURRENT
■ APPLICATIONORIENTED
CHARACTERIZATION
■ FORSMD D
=0.75 Ω
DS(on)
2
PAKVERSIONCONTACT
o
C
SALESOFFICE
APPLICATIONS
■ HIGH CURRENT, HIGH SPEEDSWITCHING
■ SWITCHMODEPOWER SUPPLY (SMPS)
■ DC-ACCONVERTER FORWELDING
EQUIPMENTAND UNINTERRUPTABLE
POWERSUPPLY (UPS)
3
2
1
I2PAK
TO-262
(suffix ”-1”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
DGR
V
I
DM
P
dv/ dt
T
(•) Pulsewidth limitedby safe operating area (1)ISD≤ 9A, di/dt ≤ 200 A/µs, VDD≤ V
March 1998
Drain-s ou r ce Voltage (VGS= 0) 500 V
DS
Drain- gate Voltage (RGS=20kΩ)
Gate-source Voltage ± 30 V
GS
I
Drain Current (c ontinuous ) at Tc=25oC8.6A
D
I
Drain Current (c ontinuous ) at Tc=100oC5.4A
D
500 V
(•) Drain Current (pulsed) 34.4 A
Tot al Dissipation at Tc=25oC 125 W
tot
Derating Factor 1.0 W/
(1) Peak Diode Recove ry vo lt a ge slope 4.5 V/ns
Storage Temperature -65 to 150
stg
T
Max. Operating J un c t io n Te mperature 150
j
,Tj≤T
(BR)DSS
JMAX
o
C
o
C
o
C
1/8
STB9NB50
THERMAL DATA
R
thj-case
R
thj-amb
R
thj-amb
T
AVALANCHE CHARACTERISTICS
Symbol Para met e r Max Va lue Uni t
I
AR
E
Ther mal Resist ance Junction-c a s e Max
Ther mal Resist ance Junction-ambient Max
Ther mal Resist ance Case-sink Ty p
Maximum Lead Temperat ure For Soldering Purpos e
l
Avalanche Curre nt , Rep et itive or Not- Re petitive
(pulse w idth limited by T
Single Pulse Avalanche Energy
AS
(starting T
=25oC, ID=IAR,VDD=50V)
j
max, δ <1%)
j
1
62.5
0.5
300
8.6 A
520 mJ
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
=250µAV
I
D
GS
=0
500 V
Breakdown Voltage
I
I
DSS
GSS
Zer o Gate V o lt age
Drain Cur re nt (V
GS
Gat e-body Leakage
Current (V
DS
=0)
=0)
=MaxRating
V
DS
V
=MaxRating Tc=125
DS
o
C
= ± 30 V
V
GS
1
50
±100 nA
ON (∗)
Symbol Parameter Test Condition s Min. Typ. Max. Unit
V
GS(th )
Gate Threshold
V
DS=VGSID
=250µA
345V
Voltage
R
DS(on)
Stati c Drain-so urce On
VGS=10V ID= 4.3 A 0.75 0.85 Ω
Resistance
I
D(on)
On S tate Drain Cur rent VDS>I
D(on)xRDS(on)max
8.6 A
VGS=10 V
DYNAMIC
Symbol Parameter Test Condition s Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansconductance
C
C
C
Input Capaci t ance
iss
Out put Capa citance
oss
Reverse Transfer
rss
Capa cit an c e
VDS>I
D(on)xRDS(on)maxID
=4.3A 4.5 5.7 S
VDS=25V f=1MHz VGS= 0 1250
175
20
1625
236
27
µA
µA
Ω
pF
pF
pF
2/8
STB9NB50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHINGON
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Tim e
VDD=250V ID=4.3A
=4.7 Ω VGS=10V
R
G
19
11
(see test circuit, figure 3)
Q
Q
Q
Total Gate Charge
g
Gat e-Source Char ge
gs
Gate-Drain Charge
gd
VDD=400V ID=8.6A VGS=10V 32
10.6
13.7
SWITCHINGOFF
Symbol Parameter Test Condition s Min. Typ. Max. Unit
t
r(Voff)
t
t
Of f - voltage Rise T im e
Fall Time
f
Cross-over Time
c
VDD=400V ID=8.6
A
=4.7 Ω VGS=10V
R
G
11.5
11
20
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol Parameter Test Condition s Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 %
(•) Pulse width limited by safeoperating area
Source-drain Current
(•)
Source-drain Current
(pulsed)
(∗) For ward O n V o lt age ISD=8.6A VGS=0 1.6 V
Reverse Recovery
rr
Time
Reverse Recovery
rr
= 8.6 A di/dt = 100 A/µs
I
SD
=100V Tj=150oC
V
R
(see test circuit, figure 5)
420
3.5
Charge
Reverse Recovery
16.5
Current
30
15
45 nC
17
16
28
8.6
34.4
ns
ns
nC
nC
ns
ns
ns
A
A
ns
µC
A
Safe Operating Area ThermalImpedance
3/8
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