SGS Thomson Microelectronics STP95NF03, STB95NF03-1, STB95NF03 Datasheet
1/9March 2003
STB95NF03
N-CHANNEL 30V - 0.0065 Ω - 95A D²PAK
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.0065 Ω
■ STANDARD THRESHOLD DRIVE
■ 100% AVALANCHE TESTED
■ SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ DC-DC & DC-AC CONVERTERS
■ SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STB95NF03 30 V <0.007
Ω
80 A
1
3
D2PAK
TO-263
(Suffix “T4”)
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area.
(*) Curren t Lim i ted by Pack age
(1) ISD ≤ 95A, di/dt ≤ 150A/µs, VDD ≤ V
(BR)DSS
, Tj ≤ T
JMAX.
(2) Starting Tj = 25 oC, ID = 47.5A, VDD = 25V
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (VGS = 0)
30 V
V
DGR
Drain-gate Voltage (RGS = 20 kΩ)
30 V
V
GS
Gate- source Voltage ± 20 V
I
D
(
∗
)
Drain Current (continuous) at T
C
= 25°C
80 A
I
D
Drain Current (continuous) at TC = 100°C
80 A
I
DM
(
•)
Drain Current (pulsed) 320 A
P
tot
Total Dissipation at TC = 25°C
150 W
Derating Factor 1 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 3.0 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 720 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
STB95NF03
2/9
THERMA L D ATA
ELECTRICAL CHARACTERISTICS (T
case
= 25 °C unless otherwise specified)
OFF
ON
(*)
DYNAMIC
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
1
62.5
300
°C/W
°C/W
°C
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250 µA VGS = 0
30 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating TC = 125°C
1
10
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
= ± 20 V
±100 nA
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
ID = 250 µA
24V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V ID = 45 A
0.0065 0.0070
Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(*)
Forward Transconductance
V
DS
= 15 V ID =45 A
50 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25V f = 1 MHz VGS = 0
2450
880
170
pF
pF
pF
3/9
STB95NF03
SWITCHING ON
(*)
SWITCHING OFF
(*)
SOURCE DRAIN DIODE
(*)
(*)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)
Pulse width l i m i ted by T
jmax
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 15 V ID = 47.5 A
R
G
= 4.7
Ω
VGS = 10 V
20
195
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=15V ID=95A VGS=10V
59
18
21
70 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 20 V ID = 47.5 A
R
G
= 4.7Ω, V
GS
= 10 V
35
35
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(
•)
Source-drain Current
Source-drain Current (pulsed)
95
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 95 A VGS = 0
1.3 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 95 A di/dt = 100A/µs
V
DD
= 20 V Tj = 150°C
(see test circuit, Figure 5)
60
120
4
ns
nC
A
Thermal Impedance
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
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