SGS Thomson Microelectronics STB90NF3LL Datasheet
STB90NF3LL
N-CHANNEL 30V - 0.0048 Ω - 80A D2PAK
LOW GATE CHARGE STripFET™ II POWER MOSFET
PRELIMINARY DATA
TYPE
V
DSS
STB90NF3LL 30 V < 0.0055
■ TYPICAL R
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ SURFACE-MOUNTING D
(on) = 0.0048 Ω @ 10 V
DS
x Qg TRADE-OFF @ 4.5 V
DS(on)
R
DS(on)
Ω
2
PAK (TO-263)
I
D
80 A(#)
POWER PACKAG E IN TU BE (NO SU FFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicro electronis unique "Single Feature
Size™" strip-based process. The resulting transistor
shows the best trade-off between on-resistance and gate
charge. When used as high and low side in buck
regulators, it gives the be st perfor manc e in terms of both
conduction and switching losses. This is extremely
important for motherboards where fast switching and
high efficiency are of paramount importance.
APPLICATIONS
■ SPECIFICALL Y D ESIGNED AND OP TIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
1
D2PAK
TO-263
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(#) Drain Current (continuous) at TC = 25°C
I
D
I
D
(
I
DM
P
tot
T
stg
T
j
Pulse wi dth limited by saf e operating area.
(•)
September 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
80 A
Drain Current (continuous) at TC = 100°C
•)
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C
80 A
200 W
Derating Factor 1.3 W/°C
Storage Temperature
Max. Operating Junction Temperature
-55 to 175 °C
(#) Value limited by wire bonding
1/7
STB90NF3LL
THERMA L D ATA
Rthj-case
Rthj-amb
T
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
l
Max
Max
0.75
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS OTHERWISE SPECIFIED)
CASE
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
30 V
Breakdown Voltage
= Max Rating
V
DS
V
= Max Rating TC = 125°C
DS
V
= ± 16 V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
= VGS I
DS
= 10 V ID = 40 A
V
GS
V
= 4.5 V ID = 40 A
GS
= 250 µA
D
1V
0.0048
0.0070
0.0055
0.0090
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15 V ID= 40 A
DS
= 25V f = 1 MHz VGS = 0
V
DS
TBD S
3000
950
190
µA
µA
Ω
Ω
pF
pF
pF
2/7
STB90NF3LL
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 40 A
t
d(on)
Turn-on Delay Time
t
r
Rise Time
V
DD
R
= 4.7 Ω VGS = 4.5 V
G
(Resistive Load, Figure 3)
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
= 24 V ID= 80 A VGS= 5 V
V
DD
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 15 V ID = 40 A
t
d(off)
Turn-off Delay Time
t
f
Fall Time
V
DD
R
= 4.7Ω, V
G
GS
= 4.5 V
(Resistive Load, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
Pulse widt h l i m i ted by safe operating area.
•)
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
= 80 A VGS = 0
SD
= 80 A di/dt = 100A/µs
I
SD
V
= 10 V Tj = 150°C
DD
(see test circuit, Figure 5)
30
225
39
14
21
37
24
55
115
3.5
51 nC
80
320
1.3 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
3/7
Loading...