SGS Thomson Microelectronics STP90NF03L, STB90NF03L-1 Datasheet
STP90NF03L
STB90NF03L-1
N-CHANNEL 30V - 0.0056Ω - 90A TO-220/I2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STP90NF03L
STB90NF03L-1
■ TYPICAL R
■ TYPICAL Q
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
DS
g
DS
DSS
30 V
30 V
(on) = 0.0056 Ω
=35nC@5V
(on) x QgTRADE-OFF
R
DS(on)
< 0.0065 Ω
< 0.0065 Ω
I
D
90 A
90 A
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size
™” strip-based process. The resulting
transistor shows the best trade-off between on-resistance and gate c harge. When used as high and
low side in buck regulators, it gives the best performance in terms of both conduc ti on and switching
losses. This is extremely important for mot herboards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
TO-220
3
2
1
I2PAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STP90NF03L P90NF03L TO-220 TUBE
STB90NF03L-1 B90NF03L
I
2
PAK
TUBE
1/9April 2003
STP90NF03L/STB90NF03L-1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
I
I
DM
P
TOT
T
stg
T
() Pulse width limited by safe operating area
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
30 V
30 V
Gate- source Voltage ±20 V
Drain Current (continuous) at TC=25°C
D
Drain Current (continuous) at TC=100°C
D
()
Drain Current (pulsed) 360 A
Total Dissipation at TC= 25°C
90 A
65 A
150 W
Derating Factor 0.73 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
j
Maximum Lead Temperature For Soldering Purpose 300 °C
l
ELECTRICAL CHARACTERISTICS (T
= 25 °C UNLESS O THERWISE SPECIFIED)
CASE
ON /OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
2/9
(BR)DSS
I
DSS
I
GSS
I
D(on)
V
GS(th)
R
DS(on)
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
On State Drain Current VDS>I
Gate Threshold Voltage VDS=VGS,ID= 250 µA
Static Drain-source On
Resistance
ID= 250 µA, VGS= 0 30 V
V
= Max Rating
=0)
DS
= Max Rating, TC= 125 °C
V
DS
V
= ±20V ±100 nA
GS
D(on)xRDS(on)max,
90 A
VGS= 10V
1
VGS= 10V, ID=45A
=5V,ID=45A
V
GS
0.0056
0.007
1µA
10 µA
2.5 V
0.0065 Ω
0.012 Ω
STP90NF03L/STB90NF03L-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
D(on)xRDS(on)max,
ID=45A
V
C
C
C
Input Capacitance
iss
Output Capacitance 860 pF
oss
Reverse Transfer Capacitance 170 pF
rss
=25V,f=1MHz,VGS=0
DS
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
Turn-on Delay Time
t
r
g
gs
gd
Rise Time 200 ns
Total Gate Charge VDD=24V,ID=90A,VGS=5V 35
Gate-Source Charge 10 nC
Gate-Drain Charge 18 nC
=15V,ID=45A
DD
RG= 4.7Ω VGS=4.5V
(see test circuit, Figure 3)
40 S
2700 pF
30 ns
47
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Turn-off-Delay Time
t
f
Fall Time
VDD=15V,ID=45A,
R
=4.7Ω, VGS= 4.5 V
G
50
105
(see test circuit, Figure 3)
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 90 A
(2)
Source-drain Current (pulsed) 360 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD=90A,VGS=0
= 90 A, di/dt = 100A/µs,
I
SD
V
=15V,Tj= 150°C
DD
(see test circuit, Figure 5)
80
90
2.5
1.3 V
ns
ns
ns
nC
A
3/9
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