SGS Thomson Microelectronics STB90NF03L Datasheet
STB90NF03L
N-CHANNEL 30V - 0.0056Ω - 90A D2PAK
LOW GATE CHARGE STripFET™ POWER MOSFET
TYPE V
STB90NF03L 30 V < 0.0065 Ω 90 A
■ TYPICAL R
■ TYPICAL Q
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
DS
g
DS
DSS
(on) = 0.0056 Ω
= 35 nC @ 5V
(on) x Qg TRADE-OFF
R
DS(on)
I
D
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size
™” strip-based process. The resulting
transistor shows the best trade-off between on-resistance and gate charge. When used a s high and
low side in buck regulators , it gives the best performance in terms of both conduction and switching
losses. This is extremely important for motherboards where fast switching and high e fficiency are
of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
Gate- source Voltage ± 18 V
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 360 A
Total Dissipation at TC = 25°C
Derating Factor 0.73 W/°C
Storage Temperature
Max. Operating Junction Temperature
30 V
30 V
90 A
65 A
150 W
– 55 to 175 °C
1/8October 2001
STB90NF03L
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 18 V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 45 A
VGS = 5V, ID = 45 A
1V
0.0056 0.0065 Ω
0.007 0.012 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 860 pF
Reverse Transfer
Capacitance
ID= 45 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
40 S
2700 pF
170 pF
2/8
STB90NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 200 ns
Total Gate Charge VDD = 24V, ID =90A,VGS = 5V 35
Gate-Source Charge 10 nC
Gate-Drain Charge 18 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off-Delay Time VDD = 15V, ID = 45 A,
Fall Time 105 ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cycle 1. 5 %.
2. Pulse width li mited by safe operating area .
Source-drain Current 90 A
(1)
Source-drain Current (pulsed) 360 A
Forward On Voltage
Reverse Recovery Time ISD = 90 A, di/dt = 100A/µs,
Reverse Recovery Charge 90 nC
Reverse Recovery Current 2.5 A
= 15V, ID = 45 A
DD
R
= 4.7Ω VGS = 4.5 V
G
(see test circuit, Figure 3)
RG=4.7Ω, V
GS
= 4.5 V
(see test circuit, Figure 3)
ISD = 90 A, VGS = 0
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
30 ns
47
50 ns
1.3 V
80 ns
nC
Ther m al Impe d enceSafe Operating Area
3/8
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