SGS Thomson Microelectronics STB8NS25 Datasheet
STB8NS25
N-CHANNEL 250V - 0.38Ω - 8A D2PAK
MESH OVERLAY™ MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB8NS25 250 V < 0.45 Ω 8 A
■ TYPICAL R
■ EXTREMELY HIGH dv /d t CAPABILITY
■ 100% AVALANCHE TESTED
(on) = 0.38 Ω
DS
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding
performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for
lighting applications.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITH MODE POWER SUPPLI ES (SMPS)
■ DC-DC CONVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
(*) Drain Current (continuos) at TC = 25°C
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 5 V/ns
T
stg
T
j
(•)Pu l se width limite d by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
250 V
250 V
Gate- source Voltage ± 20 V
8A
Drain Current (continuos) at TC = 100°C
(●)
Drain Current (pulsed) 32 A
Total Dissipation at TC = 25°C
5A
80 W
Derating Factor 0.64 W/°C
Storage Temperature –65 to 150 °C
Max. Operating Junction Temperature 150 °C
(1) ISD≤ 8A, di/dt≤300 A/µs, VDD≤ V
(*)Limit ed only by max i m um temperat ure allowed
(BR)DSS
, Tj≤ T
jMAX
1/9July 2001
STB8NS25
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.56 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID = IAR, VDD = 50 V)
j
ID = 250 µA, VGS = 0 250 V
8A
300 mJ
Breakdown Voltage
= Max Rating
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
V
DS
V
= Max Rating, TC = 125 °C
DS
V
= ±20V ±100 nA
GS
1µA
10 µA
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 4 A
234V
0.38 0.45 Ω
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 118 pF
Reverse Transfer
Capacitance
I
D
V
=4A
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
78 S
770 pF
48 pF
2/9
STB8NS25
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 18 ns
Total Gate Charge
Gate-Source Charge 5.2 nC
Gate-Drain Charge 14.8 nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(Voff)
t
t
r(Voff)
t
t
f
f
c
Turn-off- Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty cyc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 8 A
(2)
Source-drain Current (pulsed) 32 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge 1.1 µC
Reverse Recovery Current 11.3 A
= 125 V, ID = 4 A
DD
RG= 4.7Ω VGS = 10 V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
DD
VGS = 10V
VDD = 125V, ID = 4 A,
RG=4.7Ω, V
GS
= 10V
(see test circuit, Figure 3)
V
= 200V, ID = 8 A,
clamp
R
=4.7Ω, V
G
GS
= 10V
(see test circuit, Figure 5)
ISD = 8 A, VGS = 0
I
= 8 A, di/dt = 100A/µs
SD
VDD = 30V, Tj = 150°C
(see test circuit, Figure 5)
13 ns
37 51.8 nC
51
16
12.5
12.5
28
1.7 V
198 ns
ns
ns
ns
ns
ns
Safe Operating Area Ther m al Imp e d ence
3/9
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