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STB8NA50
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
TYPE V
DSS
R
DS(on )
I
D
STB 8NA50 500 V < 0.85 Ω 8A
TYPICALR
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHETESTED
REPETITIVEAVALANCHEDATAAT100
LOW INTRINSIC CAPACITANCES
GATECHARGE MINIMIZED
REDUCEDTHRESHOLD VOLTAGESPREAD
THROUGH-HOLEI2PAK (TO-262) POWER
DS(on)
= 0.7 Ω
o
C
PACKAGEIN TUBE(SUFFIX ”-1”)
SURFACE-MOUNTING D2PACK (TO-263)
POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE &REEL (SUFFIX ”T4”)
APPLICATIONS
HIGH CURRENT, HIGHSPEED SWITCHING
SWITCHMODE POWER SUPPLIES (SMPS)
DC-AC CONVERTERSFOR WELDING
EQUIPMENTANDUNINTERRUPTIBLE
POWERSUPPLIESAND MOTOR DRIVE
3
2
1
I2PAK
TO-262
1
D2PAK
TO-263
INTERNAL SCHEMATIC DIAGRAM
3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val ue Uni t
V
V
V
I
DM
P
T
(•) Pulsewidth limitedby safeoperating area
October 1995
Drain-source Voltage (VGS= 0) 500 V
DS
Drain- gate V olt age (RGS=20kΩ) 500 V
DGR
Gate-s ource Vo ltage ± 30 V
GS
I
Drain Current (continuous) at Tc=25oC8A
D
I
Drain Current (continuous) at Tc=100oC5.3A
D
(•) Drain Current (pulsed) 32 A
Tot al Dissipat ion at Tc=25oC 125 W
tot
Derat ing Fa ct or 1 W/
Sto rage Tem perature -65 to 15 0
stg
T
Max. Operat ing Juncti on Temper at u r e 150
j
o
o
o
C
C
C
1/10
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STB8NA50
THERMAL DATA
R
thj-case
R
thj-amb
R
thc-sink
T
AVALANCHE CHARACTERISTICS
Symb ol Param et er Max V al ue Uni t
I
AR
E
E
I
AR
Therm al Resistanc e Juncti on-c ase Max
Therm al Resistanc e Juncti on-am b ient Max
Therm al Resistanc e Case-sink Ty p
Maxim um Lead Tem p era t ure For So ldering Purpose
l
Avalanc h e Current , Repet it ive or Not-Repetiti ve
(pulse width limited by T
Single Pulse A valanche E ne r gy
AS
(starting T
Repetit ive Avalanche Energy
AR
=25oC, ID=IAR,VDD=50V)
j
(pulse width limited by T
max, δ <1%)
j
max, δ <1%)
j
Avalanc h e Current , Repet it ive or Not-Repetiti ve
=100oC, pu lse width limited by Tjmax, δ <1%)
(T
c
1
62.5
0.5
300
8A
350 mJ
11 mJ
5.3 A
o
C/W
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
(BR)DSS
Drain-s ource
ID= 250 µAVGS=0 500 V
Break down Vol t age
I
DSS
I
GSS
Zero G ate Voltage
Drain Current (V
GS
Gat e- body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating x 0. 8 Tc=125oC
V
DS
V
= ± 30 V ± 100 nA
GS
250
1000µAµA
ON (∗)
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
V
GS(t h)
R
DS(on)
I
D(on)
Gat e Threshold Voltage VDS=VGSID= 250 µ A 2.25 3 3.75 V
Sta t ic D rain-sourc e On
Resistance
VGS= 10V ID=4A
=10V ID=4A Tc=100oC
V
GS
On St ate Drain Cur rent VDS>I
D(on)xRDS(on)max
8A
0.7 0.85
1.7
VGS=10V
DYNAMIC
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
g
(∗)Forward
fs
Tra nsconductanc e
C
C
C
Input Capacitance
iss
Out put Capacitanc e
oss
Reverse Transfer
rss
Capacit an c e
VDS>I
D(on)xRDS(on)maxID
=4A 4.5 6.5 S
VDS=25V f=1MHz VGS= 0 1200
190
55
1600
250
75
Ω
Ω
pF
pF
pF
2/10
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STB8NA50
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
d(on)
t
r
Turn-on Time
Rise T ime
VDD= 250 V ID=4A
=4.7 Ω VGS=10V
R
G
(see test circuit, f igure 3)
(di/dt)
Turn-on Current Slope VDD= 400 V ID=8A
on
=47 Ω VGS=10V
R
G
(see test circuit, f igure 5)
Q
Q
Q
Total Ga te Charge
g
Gat e- Source Char ge
gs
Gate-Drain Charge
gd
VDD=400V ID=8A VGS=10V 55
SWITCHING OFF
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
t
r(Voff)
t
Off-volt ag e Ris e Time
t
Fall Time
f
Cross-over Time
c
VDD= 400 V ID=8A
=4.7 Ω VGS=10V
R
G
(see test circuit, f igure 5)
SOURCEDRAIN DIODE
18
25
25
35
220 A/µs
75 nC
9
25
15
15
25
22
22
35
ns
ns
nC
nC
ns
ns
ns
Symb ol Par amete r Test Cond i ti ons Min. Typ . Max. Uni t
I
SDM
I
SD
Source-drain Curr ent
(•)
Source-drain Curr ent
8
32
(pulsed)
(∗) F orward O n Volt ag e ISD=8A VGS=0 1.6 V
V
SD
t
Q
Revers e Recovery
rr
Time
Revers e Recovery
rr
ISD= 8 A di/dt = 100 A/µs
=100V Tj=150oC
V
DD
(see test circuit, f igure 5)
500
6.5
Charge
I
RRM
Revers e Recovery
26
Current
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimitedby safe operating area
Safe Operating Area ThermalImpedance
A
A
ns
µC
A
3/10