SGS Thomson Microelectronics STP85NF55, STB85NF55 Datasheet
STB85NF55
STP85NF55
N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/T O-22 0
STripFET™ II POWER MOSFET
TYPE
STB85NF55
STP85NF55
■ TYPICAL R
■ FOR THROUGH-HOLE VERSION CONTACT
V
DSS
55 V
55 V
(on) = 0.0062 Ω
DS
R
DS(on)
<0.008
<0.008
I
D
80 A
Ω
80 A
Ω
SALES OFFICE
DESCRIPTION
This Power MOSFET is the latest dev elo pment of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low onresistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL, AUDIO AMPLIFIERS
■ DC-DC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT
3
1
D2PAK
TO-263
(Suffix “T4”)
TO-220
INTERNAL SCHEMATIC DIAGRAM
3
2
1
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
(•) Drain Current (continuous) at T
I
D
I
D
(
I
DM
P
tot
dv/dt
E
AS
T
stg
T
j
(•)Current Limited by Package
(
Pulse wi dth limited by safe operating area
••)
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
55 V
55 V
Gate- source Voltage ± 20 V
= 25°C
C
Drain Current (continuous) at TC = 100°C
••)
Drain Current (pulsed) 320 A
Total Dissipation at TC = 25°C
80 A
80 A
300 W
Derating Factor 2.0 W/°C
(1)
Peak Diode Recovery voltage slope 10 V/ns
(2)
Single Pulse Avalanche Energy 980 mJ
Storage Temperature
Max. Operating Junction Temperature
(1)
ISD ≤80A, di/dt ≤300A/ µ s , VDD ≤ V
(2)
Starting Tj = 25 oC ID = 40A VDD = 25V
-55 to 175 °C
(BR)DSS
, Tj ≤ T
JMAX
.
1/10January 2003
STB85NF55/STP85NF55
THERMA L D ATA
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
0.5
62.5
300
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (T
= 25 °C unless otherwise specified)
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 250 µA, VGS = 0
V
(BR)DSS
Drain-source
I
D
55 V
Breakdown Voltage
= Max Rating
V
DS
= Max Rating TC = 125°C
V
DS
= ± 20V
V
GS
1
10
±100 nA
ON
(*)
I
DSS
I
GSS
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
= 0)
= 0)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
= V
DS
GS
= 10 V ID =40 A
V
GS
ID = 250 µA
234V
0.0062 0.008
V
Resistance
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(*)
g
fs
C
iss
C
oss
C
rss
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 15V I
DS
= 25V f = 1 MHz VGS = 0
V
DS
D
= 40 A
120 S
3700
900
310
µA
µA
Ω
pF
pF
pF
2/10
STB85NF55/STP85NF55
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
= 30 V ID = 40 A
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
rr
Q
rr
I
RRM
(*)
Pulsed: P ul se duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by s afe operating area.
Source-drain Current
(•)
Source-drain Current (pulsed)
(*)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
V
DD
= 4.7
R
Ω
G
VGS = 10 V
(Resistive Load, Figure 3)
30V ID=80A VGS=10V
V
DD=
(see test circuit, Figure 4)
= 30 V ID = 40 A
V
DD
= 4.7Ω, V
R
G
GS
= 10 V
(Resistive Load, Figure 3)
I
= 80 A VGS = 0
SD
I
= 80 A di/dt = 100A/µs
SD
= 25 V Tj = 150°C
V
DD
(see test circuit, Figure 5)
25
100
120
30
45
70
35
75
210
5.5
150 nC
80
320
1.5 V
ns
ns
nC
nC
ns
ns
A
A
ns
nC
A
Safe Operating Area
Thermal Impedance
3/10
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