SGS Thomson Microelectronics STB85NF3LL Datasheet
STB85NF3LL
N-CHANNEL 30V - 0.006Ω - 85A D2PAK
LOW GATE CHARGE STripFET™II POWER MOSFET
TYPE V
DSS
R
DS(on)
I
D
STB85NF3LL 30 V < 0.008 Ω 85 A
■ TYPICAL R
■ OPTIMAL R
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ ADD SUFFIX “T4” FOR ORDERING IN TAPE &
(on) = 0.0075Ω (@4.5V)
DS
(on) x Qg TRADE-OFF @4.5V
DS
REEL
DESCRIPTION
This application specific Power MOSFET is the third
genaration of STMicroelectronics unique “ Single
Feature Size” strip-based process. The resulting
transistor shows the best trade-off between on-resistance and gate charge. When used a s high and
low side in buck regulators , it gives the best performance in terms of both conduction and switching
losses. This is extremely important for motherboards where fast switching and high e fficiency are
of paramount importance.
APPLICATIONS
■ SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
3
1
D2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
V
GSM
I
D
I
D
I
DM
P
TOT
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS = 0)
Drain-gate Voltage (RGS = 20 kΩ)
30 V
30 V
Gate- source Voltage ± 16 V
Gate-source Voltage Pulsed
≤50µs; duty cycle 25%; Tj ≤ 150°C)
(t
p
Drain Current (continuos) at TC = 25°C
Drain Current (continuos) at TC = 100°C
(l)
Drain Current (pulsed) 340 A
Total Dissipation at TC = 25°C
± 20 V
85 A
60 A
110 W
Derating Factor 0.73 W/°C
Storage Temperature –65 to 175 °C
Max. Operating Junction Temperature 175 °C
1/9November 2001
STB85NF3LL
THERMA L D ATA
Rthj-case Thermal Resistance Junction-case Max 1.36 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
ON
(1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Maximum Lead Temperature For Soldering Purpose 300 °C
Drain-source
ID = 250 µA, VGS = 0 30 V
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
= Max Rating
DS
V
= Max Rating, TC = 125 °C
DS
V
= ± 16V ±100 nA
GS
V
= VGS, ID = 250µA
DS
VGS = 10V, ID = 40 A
VGS = 4.5V, ID = 40 A
1V
0.006 0.008 Ω
0.0075 0.0095 Ω
1µA
10 µA
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS > I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 635 pF
Reverse Transfer
Capacitance
ID= 40 A
V
DS
D(on)
x R
DS(on)max,
= 25V, f = 1 MHz, VGS = 0
30 S
2210 pF
138 pF
2/9
STB85NF3LL
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 130 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
d(off)
t
f
t
f
t
c
Turn-off-Delay Time
Fall Time
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD (1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pu l se duration = 300 µs, duty c yc l e 1.5 %.
2. Pulse width li mited by safe operating area.
Source-drain Current 85 A
(2)
Source-drain Current (pulsed) 340 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
= 15V, ID = 30A
DD
R
= 4.7Ω VGS = 4.5V
G
(see test circuit, Figure 3)
= 24V, ID = 60A,
V
DD
VGS = 4.5V
= 15V, ID = 30A,
V
DD
RG=4.7Ω, V
GS
= 4.5V
(see test circuit, Figure 3)
GS
=30A
D
= 4.5V
Vclamp =24V, I
R
=4.7Ω, V
G
(see test circuit, Figure 5)
ISD = 85A, VGS = 0
= 85A, di/dt = 100A/µs,
I
SD
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
22 ns
30
40 nC
9
12.5
36.5
36.5
32
23
40
1.3 V
65
105
3.4
nC
nC
ns
ns
ns
ns
ns
ns
nC
A
Thermal ImpedenceSafe Operating Area
3/9
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