SGS Thomson Microelectronics STB80NF55-06 Datasheet



N - CHANNEL 55V - 0.005Ω - 80A TO-262/TO-263

TYPE V

DSS

ST B80NF55-0 6 55 V < 0.0065 Ω 80 A

■ TYPICALR

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100%AVALANCHETESTED

■ APPLICATIONORIENTED

DS(on)

= 0.005 Ω

CHARACTERIZATION

■ THROUGH-HOLEI2PAK (TO-262)POWER

PACKAGEIN TUBE(SUFFIX ”-1”)\

■ SURFACE-MOUNTING D2PAK (TO-263)

POWERPACKAGEIN TUBE (NO SUFFIX) OR IN TAPE& REEL (SUFFIX ”T4”)

DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremelyhigh packing density forlow on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkablemanufacturingreproducibility.

R

DS(on)

I

D

STB80NF55-06

STripFET POWER MOSFET

PRELIMINARY DATA

3

2

1

I2PAK

TO-262

(suffix”-1”)

D2PAK

TO-263

(suffix”T4”)

INTERNAL SCHEMATIC DIAGRAM

3

1

APPLICATIONS

■ SOLENOIDAND RELAY DRIVERS

■ MOTORCONTROL, AUDIO AMPLIFIERS

■ DC-DCCONVERTERS

■ AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

DM

P

dv/ dt Peak Diode Recovery voltage sl ope 7 V/ns

T

(•) Pulse width limited by safe operating area (1)ISD≤ 80 A, di/dt ≤ 300 A/µs, VDD≤ V

October 1999

Dra in- sour c e Volt age (VGS=0) 55 V

DS

Dra in- gat e Voltage (RGS=20kΩ)55V

DGR

Gat e-source Voltage

GS

I

Dra in Cu rr ent (contin uous ) a t Tc=25oC80A

D

I

Dra in Cu rr ent (contin uous ) a t Tc=100oC57A

D

20 V

±

(•) Dra in Cu rr ent (pulsed) 320 A

Tot al Dissipat ion at Tc=25oC 210 W

tot

Der ati ng Fact or 1.43 W/

St orage Temper at ure -65 to 175

stg

T

Max. Operating Junc t ion Temper atur e 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/7

STB80NF55-06

THERMAL DATA

R

thj-case

R

thj-amb

R

thc-sink

T

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Valu e Unit

I

AR

E

Ther mal Resistanc e Junct ion-case Max Ther mal Resistanc e Junct ion-ambie nt Max Ther mal Resistanc e Case-sink Ty p Maximum Lead Tempe rat ur e F or Soldering Purpose

l

Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T

Single Pul se Avalanc he Ener gy

AS

(starting T

=25oC, ID=IAR,VDD=30V)

j

max)

j

0.7

62.5

0.5

300

80 A

650 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS

=25oC unless otherwisespecified)

(T

case

OFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

(BR)DSS

Drain-source

ID=250µAVGS=0 55 V

Break dow n Vo lt age

I

DSS

I

GSS

Zero Gate Voltage Drain Curre nt (V

GS

Gat e- bod y Leakag e Current (V

DS

=0)

V

=MaxRating

DS

=MaxRating Tc=125oC

V

DS

V

=± 20 V

GS

1

10

100 nA

±

ON (∗)

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

V

GS(th)

R

DS(on)

Gate Threshold Voltage VDS=VGSID= 250 µA 234V Sta t ic Drain-s our c e On

VGS=10V ID= 40 A 0.005 0.0065

Resistance

I

D(on)

On State Drain Current VDS>I

D(on)xRDS(on)max

80 A

VGS=10V

DYNAMIC

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansc on duc tance

C

Input Capaci t ance

iss

Out put Capac itance

oss

Reverse Transfer

rss

Capacit a nc e

VDS>I

D(on)xRDS(on)maxID

=40 A 50 S

VDS=25V f=1MHz VGS= 0 8000

1100

220

µ µA

Ω

pF pF pF

A

2/7

STB80NF55-06

ELECTRICAL CHARACTERISTICS

(continued)

SWITCHING ON

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

d(on)

t

Tur n-on Delay T ime Rise Time

r

VDD=27V ID=40A R

=4.7

G

Ω

VGS=10V

35

240

(Resis t iv e Load, see fig. 3)

Q Q Q

Tot al Gate Charge

g

Gat e- Source Charge

gs

Gate-Drain Charge

gd

VDD=44V ID=80A VGS= 10 V 178

29 61

230 nC

SWITCHING OFF

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

t

d(off)

Tur n-of f Dela y Tim e

t

Fall T ime

f

VDD = 27 V ID=40A R

G

=4.7

Ω

VGS=10V

260

80

(Resis t iv e Load, see fig. 3)

t

d(off)

t

r(Voff)

t

Tur n-of f Dela y Tim e Off-voltage Rise Time Fall T ime

f

Cross-over Time

c

VDD=44V ID=80A R

=4.7

G

Ω

VGS=10V

(Indu ct iv e Load, see fig. 5)

225

55 145 205

SOURCEDRAINDIODE

Symbol Parameter Test Con ditions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operatingarea

Source-drain Current

(•)

Source-drain Current

80

320

(pulsed)

(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

ISD= 80 A di/dt = 100 A/µs

=20V TJ=150oC

V

DD

(see test circuit, fig. 5)

80

0.24 Charge Reverse Recovery

6

Current

ns ns

nC nC

ns ns

ns ns ns ns

A A

ns

µ

A

C

3/7