SGS Thomson Microelectronics STB80NF10 Datasheet
N - CHANNEL 100V - 0.014Ω - 80A I2PAK/D2PAK
LOW Qg STripFET POWER MOSFET
TYPE V
DSS
ST B80NF10 100 V < 0.0 18 Ω 80 A
■ TYPICALR
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100%AVALANCHETESTED
■ APPLICATIONORIENTED
DS(on)
= 0.014 Ω
CHARACTERIZATION
■ SURFACE-MOUNTING D
POWERPACKAGEIN TUBE (NO SUFFIX)
OR IN TAPE& REEL (SUFFIX ”T4”)
R
DS(on)
2
PAK(TO-263)
I
STB80NF10
PRELIMINARY DATA
D
3
2
1
3
1
DESCRIPTION
This MOSFET series realized with
STMicroelectronicsunique STripFETprocess has
I2PAK
TO-262
(Suffix”-1”)
D2PAK
TO-263
(Suffix”T4”)
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced
high-efficiency, high-frequency isolated DC-DC
INTERNAL SCHEMATIC DIAGRAM
converters for Telecom and Computer
applications. It is also intended for any
applicationswith low gate drive requirements.
APPLICATIONS
■ HIGH-EFFICIENCYDC-DC CONVERTERS
■ UPSAND MOTORCONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
V
V
V
I
DM
P
dv/ dt (
E
AS
T
(•) Pulse widthlimited by safeoperating area (2) starting Tj
April 2000
Dra in- sour c e Voltage (VGS= 0) 100 V
DS
Drain- gate Voltage (RGS=20kΩ) 100 V
DGR
Gate-s ource Volt age ± 20 V
GS
Dra in Current (conti nuous) at Tc=25oC80A
I
D
Dra in Current (conti nuous) at Tc= 100oC50A
I
D
(•) Dra in Current ( puls e d) 320 A
Tot al Dissi pat io n a t Tc=25oC 210 W
tot
Der ati ng Fac t or 1.4 W/
1 ) Peak Diode Recove ry volta ge slope 9 V/ns
(2) Single Pu ls e A v alan c he Energy 245 mJ
St orage Tem pe ra t ure -65 to 175
stg
Max. Operat ing Junc tion T e m pe ra t ure 175
T
j
=25oC, ID=80A, VDD= 50V (1) ISD≤ 80 A,di/dt ≤ 300A/µs, VDD≤ V
(BR)DSS,Tj≤TJMA
o
C
o
C
o
C
1/7
STB80NF10
THERMAL DATA
R
thj-case
R
thj-amb
T
Ther mal Resistanc e Junct ion-case Max
Ther mal Resistanc e Junct ion-ambie nt Max
Maximum L ead Tempera t ure For S o lder ing Purp os e
l
0.71
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
=25oC unless otherwisespecified)
(T
case
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
ID=250µAVGS= 0 100 V
Break dow n Volt age
I
DSS
I
GSS
Zero Gate Voltage
Drain Current ( V
GS
Gat e- bod y L eak ag e
Current (V
DS
=0)
=0)
V
=MaxRating
DS
=MaxRating Tc=125oC
V
DS
V
= ± 20 V ± 100 nA
GS
1
10
ON(∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage VDS=VGSID= 250 µ A 234V
Sta t ic Drain -s ource On
VGS=10V ID= 40 A 0.014 0. 01 8 Ω
Resistance
I
D(on)
On State Drain Current VDS>I
D(on)xRDS(on)max
80 A
VGS=10V
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
(∗)Forward
fs
Tr ansc on duc tance
C
C
C
Input C apacitance
iss
Out put Capacitance
oss
Reverse Tr ansfer
rss
Capacit a nc e
VDS>I
D(on)xRDS(on)maxID
=40 A 20 S
VDS=25V f=1MHz VGS= 0 4300
600
240
µA
µ
pF
pF
pF
A
2/7
STB80NF10
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
Tur n-on Delay Time
Rise Ti m e
t
r
VDD=50V ID=40A
R
=4.7
G
Ω
VGS=10V
40
145
(Resis t iv e Loa d, see fig. 3)
Q
Q
Q
Tot al G at e Charge
g
Gat e- Source Char g e
gs
Gate-Drain Charge
gd
VDD=80V ID=80A VGS= 10 V 140
23
51
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
Tur n-of f D ela y Time
t
Fall T ime
f
VDD=27V ID=40A
=4.7 Ω VGS=10V
R
G
134
115
(Resis t iv e Loa d, see fig. 3)
t
d(off)
Off-voltage Rise Time
t
Fall T ime
f
t
Cross-over Tim e
c
Vclamp = 80 V ID=80A
=4.7 Ω VGS=10V
R
G
(Indu ct iv e Load, se e fig. 5)
111
125
185
SOURCEDRAINDIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
V
SD
t
Q
I
RRM
(∗)Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse width limitedby safe operatingarea
Source-drain Current
(•)
Source-drain Current
80
320
(pulsed)
(∗)ForwardOnVoltage ISD=80A VGS=0 1.5 V
Reverse Recover y
rr
Time
Reverse Recover y
rr
ISD= 80 A di/dt = 100 A/µs
=50V Tj=150oC
V
DD
(see test circuit, fig. 5)
155
850
Charge
Reverse Recover y
11
Current
ns
ns
nC
nC
nC
ns
ns
ns
ns
ns
A
A
ns
nC
A
3/7
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