SGS Thomson Microelectronics STB80NE03L-06-1 Datasheet
STB80NE03L-06
STB80NE03L-06-1
N-CHANNEL 30V - 0.005Ω -80AD2PAK / I2PAK
STripFET™ PO WE R MOSFET
TYPE V
STB80NE03L-06
STB80NE03L-06-1
■ TYPICAL R
■ EXCEPTIONAL dv/dt CAPABILITY
■ LOW GATE CHARGE 100°C
■ 100% AVALANCHE TES TED
(on) = 0.005 Ω
DS
DSS
30 V
30 V
R
DS(on)
< 0.006 Ω
< 0.006 Ω
I
D
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting transistor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SOLENOID AND RELAY DRIVERS
■ MOTOR CONTROL,AUDIO AMPLIFIERS
■ DC-DC & DC-AC CONVERTERS
■ AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
1
D2PAK
3
I2PAK
3
2
1
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
P
TOT
dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns
T
stg
T
j
(●) Pulse width limited by safe operating area
Drain-source Voltage (VGS=0)
Drain-gate Voltage (RGS=20kΩ)
30 V
30 V
Gate- source Voltage ± 20 V
Drain Current (continuos) at TC= 25°C
Drain Current (continuos) at TC= 100°C
()
Drain Current (pulsed) 320 A
Total Dissipation at TC= 25°C
80 A
60 A
150 W
Derating Factor 1 W/°C
Storage Temperature
Max. Operating Junction Temperature
(1) ISD≤804A, di/dt ≤300A/µs, VDD≤ V
–55to175 °C
(BR)DSS,Tj≤TJMAX.
1/9February 2003
STB80NE03L-06 / STB80NE03L- 06-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case Max 1 °C/W
Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W
T
l
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
I
AR
E
AS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
I
DSS
I
GSS
Maximum Lead Temperature For Soldering Purpose 300 °C
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
max)
j
Single Pulse Avalanche Energy
(starting T
Drain-source
= 25 °C, ID=IAR,VDD=15V)
j
ID= 250 µA, VGS= 0 30 V
80 A
600 mJ
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
Gate-body Leakage
Current (V
DS
=0)
=0)
V
= Max Rating
DS
= Max Rating, TC= 125 °C
V
DS
V
= ± 20 V ± 100 nA
GS
1µA
10 µA
ON (1)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage
Static Drain-source On
Resistance
V
DS=VGS,ID
VGS=10V,ID=40A
= 4.5 V, ID=40A
V
GS
= 250µA
1 1.7 2.5 V
0.005 0.006 Ω
0.008 Ω
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
(1) Forward Transconductance VDS>I
g
fs
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance 1500 pF
Reverse Transfer
Capacitance
D(on)xRDS(on)max,
ID=40A
V
=25V,f=1MHz,VGS=0
DS
30 50 S
6500 pF
500 pF
2/9
STB80NE03L-06 / STB80NE03L -06-1
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
t
d(on)
Q
Q
Q
t
r
g
gs
gd
Turn-on Delay Time
Rise Time 260 350 ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
r(Voff)
t
t
f
c
Off-voltage Rise Time
Fall Time
Cross-over Time
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
VSD(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Source-drain Current 80 A
(2)
Source-drain Current (pulsed) 320 A
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
=15V,ID=40A
DD
= 4.7Ω VGS=4.5V
R
G
(see test circuit, Figure 3)
=24V,ID= 80A,
V
DD
V
=5V
GS
=24V,ID=80A,
V
DD
=4.7Ω, VGS=5V
R
G
(see test circuit, Figure 3)
ISD=80A,VGS=0
= 80 A, di/dt = 100A/µs,
I
SD
VDD=15V,Tj= 150°C
(see test circuit, Figure 5)
40 55 ns
95
130 nC
30
44
70
165
250
95
220
340
1.5 V
75
0.14
4
nC
nC
ns
ns
ns
ns
nC
A
Safe Operating Area Thermal Impedence
3/9
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