SGS Thomson Microelectronics STB80NE03L-06 Datasheet



STB80NE03L-06

N - CHANNEL 30V - 0.005Ω - 80A - D2PAK

STripFET POWER MOSFET

TYPE V

DSS

R

DS(on)

I

D

STB80NE03L-06 30 V < 0.006 Ω 80 A

■ TYPICALR

■ EXCEPTIONALdv/dt CAPABILITY

■ 100% AVALANCHETESTED

■ LOW GATE CHARGE 100

■ APPLICATIONORIENTED

DS(on)

=0.005 Ω

o

C

CHARACTERIZATION

■ FOR THROUGH-HOLE VERSIONCONTACT

SALESOFFICE

DESCRIPTION

This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkablemanufacturingreproducibility.

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

■ SOLENOIDANDRELAY DRIVERS

■ MOTORCONTROL, AUDIOAMPLIFIERS

■ DC-DC& DC-AC CONVERTERS

■ AUTOMOTIVE ENVIRONMENT(INJECTION,

ABS, AIR-BAG,LAMPDRIVERS, Etc. )

3

1

D2PAK

TO-263

(suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb o l Para meter Value Uni t

V

I

DM

P

dv/ dt Peak Diode Recover y volt age slope 7 V/ns

T

(•) Pulsewidth limitedby safe operating area (1)ISD≤ 80 A,di/dt ≤ 300A/µs, VDD≤ V

July 1998

Drain-source Voltage (VGS=0) 30 V

DS

Drain- gate Voltage ( RGS=20kΩ)

DGR

Gat e- source Volt age ± 22 V

GS

I

Drain Current (cont inuous) at Tc=25oC80A

D

I

Drain Current (cont inuous) at Tc=100oC60A

D

30 V

(•) Drain Current (pulsed) 320 A

Tot al Dissipat i on at Tc=25oC150W

tot

Derat in g Factor 1 W/

Sto rage T em pe r ature -65 to 175

stg

T

Max. Operat in g Junct ion Te m peratu re 175

j

(BR)DSS,Tj≤TJMAX

o

C

o

C

o

C

1/8

STB80NE03L-06

THERMAL DATA

R

thj-case

Rthj-a mb

R

thc-sin k

T

AVALANCHE CHARACTERISTICS

Symbol Para met e r Max Va lue Uni t

I

AR

E

Ther mal Res ist ance J unctio n-c a s e Max Ther mal Res ist ance J unctio n-ambient Max Ther mal Res ist ance C ase-sink Ty p Maximum Lead Te mpera t u re For S old eri ng Pur p os e

l

Avalanche Curre nt , Repet it i v e or Not -Repet it ive (pulse w idth limited by T

Single Pulse Avalanche Energy

AS

(starting T

=25oC, ID=IAR,VDD=15V)

j

max, δ <1%)

j

1

62.5

0.5

300

80 A

600 mJ

o

C/W

oC/W

o

C/W

o

C

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

OFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

(BR)DSS

Drain-sourc e

=250µAVGS=0

I

D

30 V

Breakdown Voltage

I

DSS

I

GSS

Zer o Gate Vo ltage Drain Cur rent (V

GS

Gat e-body Leakage Current (V

DS

=0)

=MaxRating

V

DS

V

=MaxRating Tc=125oC

DS

= ± 15 V

V

GS

1

10

± 100 nA

ON (∗)

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

V

GS(th )

Gate Threshold

V

DS=VGSID

=250µA

11.72.5V

Voltage

R

DS(on)

I

D(on)

Stati c Drain-so urce On Resistance

VGS=10V ID=40A

=5V ID=40A

V

GS

On State Drain Cur rent VDS>I

D(on)xRDS(on)max

0.005 0. 006

0.008ΩΩ

80 A

VGS=10V

DYNAMIC

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

g

(∗)Forward

fs

Tr ansconductanc e

C

Input Capacit ance

iss

Out put Capa c itanc e

oss

Reverse Transfer

rss

Capa cit an c e

VDS>I

D(on)xRDS(on)maxID

=40 A 30 50 S

VDS=25V f=1MHz VGS= 0 6500

1500

500

8700 2000

700

µA µA

pF pF pF

2/8

STB80NE03L-06

ELECTRICAL CHARACTERISTICS (continued)

SWITCHINGON

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

d(on)

t

r

Turn-on Time Rise Time

VDD=15V ID=40A

=4.7 Ω VGS=5V

R

G

(see test circuit, figure 3)

Q

Total Gate Charge

g

Gat e-Sour ce Charge

gs

Gate-Drain Charge

gd

VDD=24V ID=80A VGS=5V 95

SWITCHINGOFF

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

t

r(Voff)

t

Of f - voltag e Rise Time

t

Fall Time

f

Cross-ov er Tim e

c

VDD=24V ID=80A

=4.7 Ω VGS=5V

R

G

(see test circuit, figure 5)

SOURCE DRAIN DIODE

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

SD

I

SDM

V

SD

t

Q

I

RRM

(∗) Pulsed: Pulse duration =300 µs, duty cycle 1.5 % (•) Pulse widthlimited by safeoperating area

Source-drain Current

(•)

Source-drain Current (pulsed)

(∗) For ward O n Voltage ISD=80A VGS=0 1.5 V

Reverse Recovery

rr

Time Reverse Recovery

rr

= 80 A di/dt = 100 A/µs

I

SD

=15V Tj=150oC

V

DD

(see test circuit, figure 5) Charge Reverse Recovery Current

40

26055350

130 nC 30 44

70

165 250

95 220 340

80 320

75

0.14 4

ns ns

nC nC

ns ns ns

A A

ns

µC

A

Safe Operating Areafor ThermalImpedance

3/8